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      • KCI등재

        Sn-3Ag-0.5Cu Solder에 대한 무전해 Ni-P층의 P함량에 따른 특성 연구

        신안섭,옥대율,정기호,김민주,박창식,공진호,허철호,Shin, An-Seob,Ok, Dae-Yool,Jeong, Gi-Ho,Kim, Min-Ju,Park, Chang-Sik,Kong, Jin-Ho,Heo, Cheol-Ho 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.6

        ENIG (electroless Ni immersion gold) is one of surface finishing which has been most widely used in fine pitch SMT (surface mount technology) and BGA (ball grid array) packaging process. The reliability for package bondability is mainly affected by interfacial reaction between solder and surface finishing. Since the behavior of IMC (intermetallic compound), or the interfacial reaction between Ni and solder, affects to some product reliabilities such as solderability and bondability, understanding behavior of IMC should be important issue. Thus, we studied the properties of ENIG with P contents (9 wt% and 13 wt%), where the P contents is one of main factors in formation of IMC layer. The effect of P content was discussed using the results obtained from FE-SEM(field-emission scanning electron microscope), EPMA(electron probe micro analyzer), EDS(energy dispersive spectroscopy) and Dual-FIB(focused ion beam). Especially, we observed needle type irregular IMC layer with decreasing Ni contents under high P contents (13 wt%). Also, we found how IMC layer affects to bondability with forming continuous Kirkendall voids and thick P-rich layer.

      • KCI등재

        고온고습 전압인가(Biased HAST) 시험에서 인쇄회로기판의 이온 마이그레이션 불량 메커니즘

        허석환,신안섭,함석진,Huh, Seok-Hwan,Shin, An-Seob,Ham, Suk-Jin 한국마이크로전자및패키징학회 2015 마이크로전자 및 패키징학회지 Vol.22 No.1

        전자 제품의 경박 단소화 및 고집적화가 이루어 지면서 반도체 칩뿐만 아니라 유기 기판도 고집적화가 요구되고 있다. 본 연구는 인쇄회로기판의 미세 피치 회로에 대한 고온고습 전압인가 시험을 실시하여 불량 메커니즘을 연구하였다. $130^{\circ}C/85%RH/3.3V$와 $135^{\circ}C/90%RH/3.3V$ 시험조건에서 고온고습 전압시험(Biased HAST)의 가속 계수는 2.079로 계산되었다. 불량 메커니즘 분석을 위하여 집속이온빔(FIB) 분석이 이용되었다. (+)전극에서는 콜로이드 형태의 $Cu_xO$와 $Cu(OH)_2$가 형성되었으며, (-)전극에서는 수지형태의 Cu가 관찰되었다. 이를 통해 $Cu^{2+}$ 이온과 전자($e^-$)가 결합한 수지상 Cu에 의해 절연파괴가 일어난다는 것을 확인하였다. By the trends of electronic package to be smaller, thinner and more integrative, organic printed circuit board is required to be finer Cu trace pitch. This paper reports on a study of failure mechanism for PCB with fine Cu trace pitch using biased HAST. In weibull analysis of the biased HAST lifetime, it is found that the acceleration factor (AF) of between $135^{\circ}C/90%RH/3.3V$ and $130^{\circ}C/85%RH/3.3V$ is 2.079. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $Cu_xO/Cu(OH)_2$ colloids and Cu dendrites were formed at anode (+) and at cathode (-), respectively. Thus, this gives the evidence that Cu dendrites formed at cathode by $Cu^{2+}$ ion migration lead to a short failure between a pair of Cu nets.

      • KCI등재

        고온고습 전원인가 시험에서 Cl에 의한 이온 마이그레이션 불량

        허석환,신안섭,Huh, Seok-Hwan,Shin, An-Seob 대한용접접합학회 2015 대한용접·접합학회지 Vol.33 No.3

        By the trends of electronic package to be more integrative, the fine Cu trace pitch of organic PCB is required to be a robust design. In this study, the short circuit failure mechanism of PCB with a Cl element under the Temperature humidity bias test ($85^{\circ}C$/85%RH/3.5V) was examined by micro-structural study. A focused ion beam (FIB) and an electron probe micro analysis (EPMA) were used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $CuCl_x$ were formed and grown on Cu trace during the $170^{\circ}C$/3hrs and that $CuCl_x$ was decomposed into Cu dendrite and $Cl_2$ gas during the $85^{\circ}C$/85%RH/3.5V. It is suggested that Cu dendrites formed on Cu trace lead to a short circuit failure between a pair of Cu traces.

      • SCOPUSKCI등재

        PCB Photo-lithography 공정에 사용되는 Photo-resist인 Dry Film에 대한 물의 확산 침투 현상평가

        이춘희 ( Choon Hee Lee ),정기호 ( Gi Ho Jeong ),신안섭 ( An Seob Shin ) 한국공업화학회 2013 공업화학 Vol.24 No.6

        In this study, we have evaluated the water absorption phenomenon of photoresist dry film, which is commonly used to build circuits on PCB (Printed Circuit Board) by photolithography, by using ATR-FTIR (Attenuated Total Reflectance-Fourier Transform Infrared). We have firstly observed significant change in fracture mode of dry film with respect to temperature and humidity, which we assumed the material transition from ductile to brittle. Secondly, we have established the process of absorption test for determining the diffusion coefficients of water into the dry film both with gravimeter and ATR-FTIR. We have successfully calculated the diffusion coefficients for each environmental conditions from the results which we achieved by gravimeter and ATR-FTIR. Compared to the gravimeter which is a conventional method for absorption test, the ATR-FTIR method in this study has been found to be very easy to use and have the same accuracy as gravimeter. Moreover, we are expecting to use the ATR-FTIR as an appropriate method to study the absorption phenomena related to any kinds of solvent and polymer system.

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