http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
ALD법을 이용해 증착된 TaN 박막의 Cu 확산방지 특성
나경일 ( Kyoung Il Na ),허원녕 ( Won Nyung Hur ),부성은 ( Sung Eun Boo ),이정희 ( Jung Hee Lee ) 한국센서학회 2004 센서학회지 Vol.13 No.3
N/A For a diffusion barrier against copper, tantalum nitride films have been deposited on SiO₂ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and NH, as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature 250℃ was about 0.67 A per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in N2 ambient and characterized through XRD. sheet resistance, and C-V measurement(Cu(1000 Å)/TaN(50 Å)/SiO₂(2000 Å)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below 400℃.
소형 밀리미터파 추적 레이더를 위한 광대역 신호처리 기술 연구
최진규,나경일,신영철,홍순일,박창현,김윤진,김홍락,주지한,김소수,Choi, Jinkyu,Na, Kyoung-Il,Shin, Youngcheol,Hong, Soonil,Park, Changhyun,Kim, Younjin,Kim, Hongrak,Joo, Jihan,Kim, Sosu 한국인터넷방송통신학회 2021 한국인터넷방송통신학회 논문지 Vol.21 No.6
Recently, a small tracking radar requires the development of a small millimeter wave tracking radar having a high range resolution that can acquire and track a target in various environments and disable the target system with a single blow. Small millimeter wave tracking radar with high range resolution needs to implement a signal processor that can process wide bandwidth signals in real time and meet the requirements of small tracking radar. In this paper, we designed a signal processor that can perform the role and function of a signal processor for a small millimeter wave tracking radar. The signal processor for the small millimeter wave tracking radar requires the real-time processing of input signal of OOOMHz center frequency and OOOMHz bandwidth from 8 channels. In order to satisfy the requirements of the signal processor, the signal processor was designed by applying the high-performance FPGA (Field Programmable Gate Array) and ADC (Analog-to-digital converter) for pre-processing operations, such as DDC (Digital Down Converter) and FFT (Fast Fourier Transform). Finally, the signal processor of the small millimeter wave tracking radar was verified via performance test. 최근 소형 추적 레이더는 다양한 환경에서 표적을 획득하고, 추적하여 한 번의 타격으로 표적의 시스템을 무능화 시킬 수 있는 높은 거리해상도를 갖는 소형 밀리미터파 추적 레이더 개발을 요구한다. 높은 거리해상도를 갖는 소형 밀리미터파 추적 레이더는 넓은 대역폭의 신호를 실시간으로 처리하고, 소형 추적 레이더의 성능 요구 조건을 충족할 수 있는 신호처리기의 구현이 필요하다. 본 논문에서는 소형 밀리미터파 추적 레이더의 신호처리기 역할과 기능을 수행할 수 있는 신호처리기를 설계하였다. 소형 밀리미터파 추적 레이더를 위한 신호처리기는 8채널에서 입력되는 OOOMHz의 중심주파수와 OOOMHz 대역폭의 신호를 실시간으로 처리하기를 요구한다. 신호처리기의 요구사항을 만족하기 위해 고성능 프로세서 및 ADC (Analog-to-digital converter) 적용과 FPGA (Field Programmable Gate Array)를 활용한 DDC (Digital Down Converter), FFT (Fast Fourier Transform) 등의 전처리 연산을 적용하여 신호처리기를 설계하였다. 마지막으로 소형 밀리미터파 추적 레이더를 위한 신호처리기의 성능시험을 통하여 구현한 신호처리기를 검증하였다.
Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성
도관우,김경민,양충모,박성근,나경일,이정희,이종현,Do Kwan Woo,Kim Kyoung Min,Yang Chung Mo,Park Seong Guen,Na Kyoung Il,Lee Jung Hee,Lee Jong Hyun 한국반도체디스플레이기술학회 2005 반도체디스플레이기술학회지 Vol.4 No.2
In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.
Plasma Assisted ALD 장비를 이용한 니켈 박막 증착과 Ti 캡핑 레이어에 의한 니켈 실리사이드 형성 효과
윤상원,이우영,양충모,하종봉,나경일,조현익,남기홍,서화일,이정희,Yun, Sang-Won,Lee, Woo-Young,Yang, Chung-Mo,Ha, Jong-Bong,Na, Kyoung-Il,Cho, Hyun-Ick,Nam, Ki-Hong,Seo, Hwa-Il,Lee, Jung-Hee 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.3
The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.