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장인갑,최경민,최병륜,Jang, In-Gap,Choe, Gyeong-Min,Choe, Byeong-Ryun 대한기계학회 1996 大韓機械學會論文集B Vol.20 No.7
So most practical combustor is considered to the swirl flame, it is very important to examinate swirl flame structure and combustion characteristics. Recently, attention has been paid to the flame diagnostic by radical luminous intensity. For swirl flame structure and combustion characteristic, reverse flow boundary, temperature, ion current and radical luminous intensity were measured in the double-coaxial swirl combustor which was used principle of multi-annular combustor. This study had three experimental condition, S-type, C-type, SC-type. S-type and C-type flames were formed recirculation zone, but SC-type flame wasn't formed. C-type flame had two recirculation zone. The position with maximum value of ion current and CH-radical, temperature and OH-radical had similarity distribution almost. Therefore, it is possible that the macro structure of flame was measured by radical luminous intensity in the high intensity of turbulent combustion field which was formed by swirl.
장인갑,권오민,유충현 청주대학교 산업과학연구소 2000 産業科學硏究 Vol.18 No.1
An MOVPE system for the growth of Ⅲ-Ⅴ compound semiconductors has been fabricated and characterized in this study. The system was designed to have the capability of depositing Ⅲ-Ⅴ binary, ternary or quaternary alloys under atmospheric pressure. It consists of a gas handling system with a linear 6-channel vent/reactor manifold, a quartz reaction chamber, and an exhaust system. A horizontal rectangular reactor was used to increase the growth rate, uniformity and abruptness between layers by reducing the cross-sectional area and utilizing the source materials more efficiently. Homoepitaxial growth of GaAs has been investigated to evaluate the feasibility of the designed system. The grown layers were single crystalline by X-ray diffraction and photoluminescence measurements. And electrochemical carrier concentration profiling in the depth direction assured the uniformity in the grown layers. As a result, the fabricated MOVPE system was confirmed to be capable of growing single crystalline multilayer structures of Ⅲ-Ⅴ compound semiconductors with a high degree of perfection and well-defined properties.
양극 산화를 이용한 InP MOS 다이오드의 제작과 특성
장인갑,유충현 청주대학교 산업과학연구소 2000 産業科學硏究 Vol.17 No.2
Au/oxide/n-InP MOS diodes were fabricated from heteroepitaxial InP layers on GaAs by using the anodic oxidation technique for the passivation of InP surface. A solution of 10 gram of ammonium pentaborate in 100 cc of ethylene glycole was used as the electrolyte. The barrier heights determined from three different techniques, I-V measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature C-V measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode with no InP passivation. The ideality factors of 1.1 - 1.3 of the MOS diodes were also determined from the I-V characteristics. Electron traps in the heteroepitaxial InP layers were investigated by the DLTS technique, which revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state.