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이우선,고필주,이영식,서용진,홍광준 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.2
CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.
텅스텐 슬러리를 사용한 Cu-CMP 특성에서 산화제 첨가의 영향
이우선,최권우,이영식,최연옥,오용택,서용진 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.2
We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.
텡스텐 플러그 CVD 공정에서 SiH<sub>4</sub> Soak의 영향
이우선,서용진,김상용,박진성 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1
The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.
알루미늄 스크랩을 이용하여 제작한 접지 전극의 전압-전류 특성
이우선,정용호,박진성 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.8
I-V characteristics of ground electrode fabricated using an aluminium scrap are presented. We fabricated several shapes of aluminium scraps and aluminium electrodes. The results show that the current of aluminium electrode increased linearly by the voltage increase. AC breakdown voltage of copper plate electrode was higher than that of aluminium electrode. AC breakdown current of aluminium electrode was higher than that of copper plate electrode. As applied voltage increased, grounding resistance of aluminum electrode decreased linearly.
강유전체 표시기용 고전압 비정질 실리콘 박막트렌지서트의 온도변화 특성
이우선,김남오,이경섭 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.6
We fabricated high voltage hydrogenerated amorphous silicon thin film transistors (a Si:H HVTFT) and investigated its temperature dependent characteristics of from 303 K to 363 K. The results show that the drain current was decreased at low gate voltage and increased at high gate voltage exponentially. According to the increasing the thickness of a Si layer, drain current increased. Difference of drain current at 363 K was increasd at the lower gate voltage and decreased at the higher gate voltage. When the drain and gate voltage of 100 V applied, the drain current increased linearly with rise temperature.