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문주호,정선호,Seong Hui Lee,김동조 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4
A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-croslinkable organic functional group for photopaternability and a Zr-based alkoxide, which provided for a high dielectric constant (∽5.5). To obtain a precisely paterned dielectric layer with a linewidth of 3 μm, the pre- bake temperature and the UV iradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-croslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.
Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors
문주호,김동주,정선호,Jooho Moon,Chiyoung Park,Minhyon Jeon,Won-Chol Sin,Jinha Jung,Hyun-Jung Woo,Seung-Hyun Kim,Jowoong Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.