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Yuichi Sato,Hirotoshi Hatori,Suguru Igarashi,Manabu Arai,Kazuki Ito,Syota Kikuchi 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Cadmium telluride (CdTe) thin films were grown on sapphire c-face single-crystal substrates by vacuum evaporation. Prior to growing the CdTe thin films, conducting thin films of Ni, Mo, Ti and titanium nitride (TiN) were grown on the sapphire substrates. The crystallinities and photoluminescence (PL) properties of the CdTe thin films grown on the various conducting thin films were investigated and they were compared with those of CdTe thin films grown directly on sapphire substrates without a conducting thin film. CdTe thin films with relatively high crystallinities were obtained when Ti and TiN were used as the conducting thin film. Therefore, the PL properties of the CdTe thin films on such conducting thin films were not inferior to those of the CdTe thin film grown directly on the sapphire substrate. The effect of the Cd and Te supply ratio on the properties of the CdTe thin films was also investigated. The CdTe thin films had much higher crystallinities when they were grown in Te-rich conditions than in Cd-rich conditions.
Shogo Maeda,Shinsaku Kawabata,Itsuki Nagase,Ali Baratov,Masaki Ishiguro,Toi Nezu,Takahiro Igarashi,Kishi Sekiyama,Suguru Terai,Keito Shinohara,Melvin John F. Empizo,Nobuhiko Sarukura,Masaaki Kuzuhara 대한전자공학회 2024 Journal of semiconductor technology and science Vol.24 No.1
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.