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Shogo Maeda,Shinsaku Kawabata,Itsuki Nagase,Ali Baratov,Masaki Ishiguro,Toi Nezu,Takahiro Igarashi,Kishi Sekiyama,Suguru Terai,Keito Shinohara,Melvin John F. Empizo,Nobuhiko Sarukura,Masaaki Kuzuhara 대한전자공학회 2024 Journal of semiconductor technology and science Vol.24 No.1
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.