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佐藤厚(Sato Atsushi) 불교학연구회 2005 불교학연구 Vol.11 No.-
Shi er yin yuan guan "十二因?? has been known as a text of Chengguan’s 澄?(738839), the 4th patriarch of Chinese Hua-yen school. However, there is possibility that the text was written in Silla. There are certain grounds to support the idea that from Silla Hua yen Buddhism had produced the text.<BR> The first argument to support this hypothesis is that the text itself neither appease in any literature connected with Cheng guan’s biography nor in his writings. The important point worthy of attention in that no Chinese Buddhist scholars refered the text ever. The first appearance of connection between Cheng guan and "Shi er yin yuan guan " is found in Uichon’s 義天 (10551101) table of Buddhist scriptures, a work accomplished during the Koryo dynasty in the 11th century.<BR> The text contains three parts in which first part explanation of twelve parts pratityasamtpada using metaphor of a big tree and river. The second part deals with how to extinguish the cause of twelve parts pratityasamtpada. The final part is explanation of three views, yin yuan guan因??, yuan gi guan?起?, hsing gi guan性起 ?. The last part has been considered significant theory in the text. This does not, however, exist in Cheng guan’s other writings. It should be noted that in exists only in Silla Huayen writings.<BR> On the basis of aforementioned arguments, it is most likely that "Shi er yin yuan guan" was produced by a Silla Huayen scholar.<BR> In this situation, there still remains a pertinent question why did Uichon consider this text Chengguan as the author of "Shi er yin yuan guan"? It is still a very controversial question in korean Buddhist historiography. There is another historical assumption that Uichon could have considered ‘guansi’?師as ‘Chengguan’ 澄? who appears in “Popkyedokichonsurok”法界?記叢??, a text produced in Korea.
ATSUSHI SAWADA,HISASHI SATO 한국원자력학회 2010 Nuclear Engineering and Technology Vol.42 No.1
Experimental examinations for evaluating fractures were conducted by using transparent replicas of a single fracture in order to obtain the fracture data to contribute to the methodology on how to improve the definition of representative parameter values used for a parallel plate fracture model. Quantitative aperture distribution and quantitative tracer concentration data at each point in time were obtained by measuring the attenuation of transmitted light through the fracture in high spatial resolution. The representative aperture values evaluated from the multiple different measurement methods, such as arithmetic mean of aperture distribution measured by the optical method, transport aperture evaluated from the tracer test, and average aperture evaluated from the fracture void volume measurement converged to a unique value that indicates the accuracy of this experimental study. The aperture data was employed for verifying the numerical simulation under the assumption of Local Cubic Law and showed that the calculated flow rate through the fracture is 10% – 100% larger than hydraulic test results. The quantitative tracer concentration data is also very valuable for validating existing numerical code for advection dispersion transport in-plane heterogeneous fractures.
Growth of oriented $LaF_{3}$ thin films on Si (100) substrates by the pulsed laser deposition method
Yokotani, Atsushi,Ito, Tomomi,Sato, Akiko,Kurosawa, Kou The Korea Association of Crystal Growth 2003 韓國結晶成長學會誌 Vol.13 No.4
$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.