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Novel Semiconductor Devices for High Speed VLSI and Ultra-High Frequency Applications
Shur,Michael S.,Lee,Kwy Ro,Peatman,William C. B.,Gelmont,Boris 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
We discuss novel device structures which may present an alternative to conventional technology choices for ultra-high speed integrated circuits. These devices include n-HFETs, Dipole HFETs, complementary HFETr (C-HFETs), split-gate and Variable Threshold voltage HFETs (VTHFETs), Tunneling Emitter Bipolar Transistors (TEBTs), and heterodimensional transistors. π-HFETs are most suitable far digital VLSI applications, C-HFETs hold promise of low power VLSI. Splitgate FETs and Tunneling Emitter Bipolar Transistors devices may find applications in millimeter and submillimeter range. Heterodimensional Transistors have a potential of ultra-low power applications.
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Zydr unas Podlipskas,Ram unas Aleksiej unas,Saulius Nargelas,Ye Seul Yun,J uras Mickevi cius,Ar unas Kadys,Chong Yun Kang,Michael S. Shur,Max Shatalov,Jinwei Yang,Remis Gaska 한국물리학회 2016 Current Applied Physics Vol.16 No.6
Nonradiative recombination rate and diffusivity of nonequilibrium carriers were modified by intense laser pulses in AlGaN epilayers with Al content ranging from 16 to 71%. The epilayers were examined before and after the photomodification using light-induced transient grating and photoluminescence spectroscopy techniques. The photomodification resulted in (i) enhancement of the nonradiative recombination rate and (ii) large changes of the diffusion coefficient of the nonequilibrium carriers, without imposing any macroscopic structural damage to the epilayers. The photomodification effect on the recombination rate was stronger in the layers with higher Al content indicating the involvement of the Al atoms in this process. The carrier diffusivity exhibited a rapid initial increase as a consequence of the photomodification followed by a slow decline, as the photomodification duration was increased. The enhancement of the diffusion coefficient of up to 2.4 times was accompanied by 13% decrease in the carrier lifetime.