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Novel Semiconductor Devices for High Speed VLSI and Ultra-High Frequency Applications
Shur,Michael S.,Lee,Kwy Ro,Peatman,William C. B.,Gelmont,Boris 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
We discuss novel device structures which may present an alternative to conventional technology choices for ultra-high speed integrated circuits. These devices include n-HFETs, Dipole HFETs, complementary HFETr (C-HFETs), split-gate and Variable Threshold voltage HFETs (VTHFETs), Tunneling Emitter Bipolar Transistors (TEBTs), and heterodimensional transistors. π-HFETs are most suitable far digital VLSI applications, C-HFETs hold promise of low power VLSI. Splitgate FETs and Tunneling Emitter Bipolar Transistors devices may find applications in millimeter and submillimeter range. Heterodimensional Transistors have a potential of ultra-low power applications.