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Reddy, M. Siva Pratap,Kwon, Mi-Kyung,Kang, Hee-Sung,Kim, Dong-Seok,Lee, Jung-Hee,Reddy, V. Rajagopal,Jang, Ja-Soon The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.5
We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
Reddy, M. Siva Pratap,Park, Herie,Lee, Jung-Hee Elsevier 2018 Optical materials Vol.76 No.-
<P><B>Abstract</B></P> <P>In this work, we present a residue-and-polymer-free graphene transfer method by using the adhesive force between graphene and a target substrate, the hydrophobic property of graphene, and the surface tension of the solutions. We used an n-type GaN substrate as the target substrate to make a photodiode (PD). Recently, the inclusion of biomolecules in photodetection technology has attracted considerable attention in the electronics and photonics research, particularly due to the rapid evolution of organic-inorganic bio-hybrid PDs (Bio-HPDs). This report presents a significant photoresponse of the bioinspired graphene-based PD fabricated with deoxyribonucleic acid-cetyltrimetylammonium chloride (DNA-CTMA) biomolecules on the n-type GaN substrate. Bio-HPDs respond to the infrared, visible, and ultraviolet wavelengths. Moreover, the Bio-HPDs show photosensitivities (I<SUB>photo</SUB>/I<SUB>dark</SUB>) of 21, 143, and 1194 for infrared, visible, and ultraviolet wavebands, respectively, which can be attributed to the integration of high-mobility graphene and photosensitive DNA-CTMA biomolecules. In addition, the corresponding charge transfer mechanisms in the PDs are explained by energy band diagrams.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Simple and cost-effective graphene transfer method is proposed. </LI> <LI> High-performance DNA-CTMA/graphene/n-GaN bio hybrid photodiode fabricated. </LI> <LI> The bio hybrid photodiode parameters investigated by I-V measurements. </LI> <LI> Transient photo characteristics were examined. </LI> </UL> </P>
M. Siva Pratap Reddy,Peddathimula Puneetha,이영웅,정성훈,박진호 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.1
Inthis work, a deoxyribonucleic acid-cetyltrimethylammoniumchloride (DNA-CTMA) biomaterial based p-type hydrogenatedamorphous silicon (a-Si:H) photodiode (PD) is fabricated and itselectrical characteristics are investigated. The Al/DNA-CTMA/p-type a-Si:H PD parameters are studied using current-voltage (I-V), capacitancevoltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f)measurements. The barrier height and the ideality factor of the diode arefound to be 0.78 eV and 1.9, respectively. The electrical andphotoconductivity properties of the diode are analyzed by using dark I-Vand transient photocurrent techniques. The C-V-f and G/ω-V-fmeasurements indicate that the capacitance and conductance of the diodedepend on the voltage and frequency, respectively. The experimentalresults reveal that the decreases in capacitance and the increases inconductance with an increase in frequency can be explained on the basisof interface states (NSS). Series resistance (RS) measurements areperformed on the diode and discussed here. The obtained electricalparameters confirm that the Al/DNA-CTMA/p-type a-Si:H PD can beused as an optical sensor for the development of commercial applicationsthat are environmentally benign.
Siva Pratap Reddy, M.,Rajagopal Reddy, V.,Jyothi, I.,Choi, Chel‐,Jong John Wiley Sons, Ltd. 2011 Surface and interface analysis Vol.43 No.9
<P><B>Abstract</B></P><P>Schottky rectifiers are fabricated on <I>n</I>‐type GaN using Ni/Pd metallization scheme and its characteristics have been investigated by current‐voltage (I‐V), Capacitance‐Voltage (C‐V), X‐Ray Diffraction (XRD) and SIMS measurements as a function of annealing temperature. The calculated Schottky barrier height of the as‐deposited contact was found to be 0.60 eV (I‐V), 0.71 eV (C‐V) with an ideality factor of 1.44. However, the barrier height slightly increases after annealing at 300, 400 and 500 °C. On the basis of the experimental results, a high‐quality Schottky contact with barrier height and ideality factor of 0.81 eV (I‐V), 0.88 eV (C‐V) and 1.13 respectively, can be obtained after annealing at 600 °C for 1 min in a nitrogen atmosphere. Further, after annealing at 700 °C, it is found that the barrier height slightly decreased to 0.74 eV (I‐V) and 0.85 eV (C‐V). From the above observations, one can note that Ni/Pd Schottky contact exhibits excellent electrical properties after a rapid thermal annealing at 600 °C. According to the SIMS and XRD analysis, the formation of gallide phases at the Ni/Pd/<I>n</I>‐GaN interface could be the reason of the barrier height increase at elevated annealing temperatures. The Atomic Force Microscopy (AFM) results show that the overall surface morphology of Ni/Pd Schottky contacts on <I>n</I>‐GaN is fairly smooth. The above observations reveal that Ni/Pd Schottky metallization scheme was a good choice for the fabrication of high‐temperature and high‐power device applications. Copyright © 2010 John Wiley & Sons, Ltd.</P>
DNA-CTMA/a-Si:H bio-hybrid photodiode: A light-sensitive photosensor
Reddy, M. Siva Pratap,Puneetha, P.T.,Lee, Young-Woong,Jeong, Seong-Hoon,Park, Chinho Elsevier 2017 Organic electronics Vol.50 No.-
<P><B>Abstract</B></P> <P>Recently, considerable interest have occurred in the development of an organic-inorganic-based bio-hybrid photodiodes (Bio-HPDs) with metal-free, eco-friendly, and cost-competitive features for light-sensitive devices. This paper reports a bio-inspired optical absorber material for the fabrication of Bio-HPDs using n-type hydrogenated amorphous silicon (a-Si:H) and a natural deoxyribonucleic acid (DNA)-cetyltrimethylammonium chloride (CTMA) biomaterial. a-Si:H is inexpensive and abundant, and DNA-CTMA is metal-free and eco-friendly. A DNA-CTMA coating on n-type a-Si:H leads to a chemically stable material with increased absorption and effective ties of dangling bonds and interface state density. Analysis results showed that the rectification ratio (RR) of the Bio-HPD is found to be 4 times higher than reference PD. This indicates that the effective RR is improved by the DNA-CTMA layer since it creates molecular charge interactions between DNA-CTMA layer and a-Si:H substrate. Moreover, Bio-HPD shows a light photosensitivity (I<SUB>photo</SUB>/I<SUB>dark</SUB>) of 474 with more reliable and has longer life time. In addition, the formation and feasible charge transport mechanisms are discussed. This biomaterial can be used for the development of commercially viable and environmentally safe large-scale Bio-HPDs applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> High-contrast DNA-CTMA/a-Si:H bio hybrid light-sensitive device fabricated. </LI> <LI> The photodiode parameters investigated by I–V measurements. </LI> <LI> XPS and XRD structural properties were examined. </LI> <LI> FTIR, Raman and UV–Vis measurements were used. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
M. Siva Pratap Reddy,Mi-Kyung Kwon,Hee-Sung Kang,Dong-Seok Kim,Jung-Hee Lee,V. Rajagopal Reddy,Ja-Soon Jang 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.5
We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (Fbo) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The Fbo and the series resistance (RS) obtained from Cheung’s method are compared with modified Norde’s method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density (NSS) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density NSS as determined by Terman’s method is found to be 2.14x10<SUP>12</SUP> cm<SUP>-2</SUP> eV<SUP>-1</SUP> for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
Balaram, N.,Reddy, M. Siva Pratap,Reddy, V. Rajagopal,Park, Chinho Elsevier 2016 THIN SOLID FILMS - Vol.619 No.-
<P><B>Abstract</B></P> <P>The structural, chemical, electrical and carrier transport properties of high-k ZrO<SUB>2</SUB> on n-type InP with Au electrode have been studied by <U>X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS)</U>, current-voltage (IV) and capacitance-voltage (CV) techniques at room temperature. Results show that the high barrier height is achieved for the Au/ZrO<SUB>2</SUB>/n-InP metal-insulator-semiconductor (MIS) diode as compared to the Au/n-InP metal-semiconductor (MS) diode. Using Cheung's functions, the barrier height, ideality factor and series resistance are estimated for the MS and MIS diodes. The barrier heights are determined by IV, Cheung's and surface potential-forward voltage plot for both the MS and MIS diodes which are found to be in good agreement with each other. Results indicate that the interface state density of Au/ZrO<SUB>2</SUB>/n-InP MIS diode is lower than that of Au/n-InP MS diode. This may be attributed to the fact that the introduction of the high-k ZrO<SUB>2</SUB> interlayer led to reduction of the interface state density in the Au/n-InP MS diode. Results indicate that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region while Schottky emission is dominant in the higher bias region for both the Au/n-InP MS and Au/ZrO<SUB>2</SUB>/n-InP MIS diodes.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Effect of high-k ZrO<SUB>2</SUB> interlayer on electrical properties of Au/n-InP MS diode has been studied. </LI> <LI> High barrier height is obtained for Au/ZrO<SUB>2</SUB>/n-InP MIS diode compared to the MS diode. </LI> <LI> Interface state density of Au/ZrO<SUB>2</SUB>/n-InP MIS diode is lower than that of Au/n-InP MS diode. </LI> <LI> Transport properties of Au/n-InP MS and Au/ZrO<SUB>2</SUB>/n-InP MIS diodes have been investigated. </LI> </UL> </P>