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Analysis on the temperature dependent electrical properties of graphene/ Al–ZnO Schottky contact
Yapeng Li,Yingfeng Li,Jianhua Zhang,Xiangyu Zou,Yongshan Wang 한국물리학회 2019 Current Applied Physics Vol.19 No.10
The electrical characteristics of the graphene/Al–ZnO schottky contact with the temperature of 180 K–300 K have been discussed in detail. Based on the TE model, the barrier height increased and the ideal factor decreased with the increasing of temperature from 180 K to 300 K, which can be interpreted by the lateral inhomogeneities of schottky barrier height. Combined with the single gauss distribution function of barrier height, the lateral inhomogeneities distribution of barrier height at the interface was confirmed. By DLTS measurement, one electron trap centers were observed at the interface.
High-performance hybrid white organic light-emitting diodes employing p-type interlayers
Baiquan Liu,Hong Tao,Jianhua Zou,Miao Xu,Dongyu Gao,Linfeng Lan,Lei Wang,Honglong Ning,Junbiao Peng 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.27 No.-
A simplified hybrid white organic light-emitting diode (WOLED) employing a p-type interlayer isdesigned, simultaneously realizing high efficiency, high color rendering index (CRI), low efficiency roll-off, low voltage and stable color. The device exhibits maximum total efficiencies of 29.8 cd/A and20.9 lm/W, which slightly decrease to 28.6 cd/A and 16.5 lm/W even at a high luminance of 5000 cd/m2. Besides, a slight color-shift and a CRI of 85 at 100 cd/m2 (3.65 V) are obtained. Such superior resultssystematically demonstrate that the use of p-type interlayer is a new way to realize high-performancehybrid WOLEDs.
Baiquan Liu,Honglong Ning,Lei Wang,Jianhua Zou,Zhongwei Zhou,Miao Xu,Hong Tao,Dongyu Gao,Linfeng Lan,Junbiao Peng 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.30 No.-
An efficient single-emitting layer hybrid white organic light-emitting diode (WOLED) was developed,simultaneously fulfilling low efficiency roll-off, stable color and extreme luminance. At the practicalluminance of 1000 cd/m2, a total current efficiency of 42.8 cd/A and power efficiency of 19.2 lm/W areachieved, maintaining as high as 40.5 cd/A and 15.5 lm/W even at 5000 cd/m2. Besides, a slight colorvariation [(0.025, 0.011)] and extreme luminance ( 106 cd/m2) are obtained. The working mechanism isunveiled and it is demonstrated that the triplet-exciton-confining ability of electron transport layersplays a more vital role in device performances, particularly for the lifetime.
A metal oxide TFT gate driver with a single negative power source employing a boosting module
Yangang Xu,Jun-Wei Chen,Wen-Xing Xu,Lei Zhou,Wei-Jing Wu,Jianhua Zou,Miao Xu,Lei Wang,Junbiao Peng 한국정보디스플레이학회 2020 Journal of information display Vol.21 No.1
This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a lower level than VSS. The proposed gate driver with 15 stages is fabricated through the IZO TFT process on a glass substrate to verify its function. The experiment results showed that the proposed gate driver can successfully output full-swing waveforms with resistive load RL=2 kΩ and capacitive load CL=30 pF at the 16.7 and 66.7 kHz clock frequencies, and can also output as small as 3.2 μs pulse width with little distortion, revealing good stability.