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Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides
Xu, Hongjun,Hsu, Ming-Chien,Fuh, Huei-Ru,Feng, Jiafeng,Han, Xiufeng,Zhao, Yanfeng,Zhang, Duan,Wang, Xinming,Liu, Fang,Liu, Huajun,Cho, Jiung,Choi, Miri,Chun, Byong Sun,Ó,Coileá,in, Cormac The Royal Society of Chemistry 2018 Journal of Materials Chemistry C Vol.6 No.12
<P>Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of −10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, Bc, and the MR shows a plateau of near zero MR. When B < Bc, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.</P>
Study of Multi-attribute Comprehensive Evaluation Method Based on Attribute Theory
Xu Guanglin,Liu Nianzu,Duan Xueyan 보안공학연구지원센터 2015 International Journal of Database Theory and Appli Vol.8 No.3
The study of Comprehensive Evaluation Model of Attribute Theory has gained fruitful achievements in both theory and practice. But the current preference curve of evaluator is assumed to be a smooth quadratic equation which fails to well reflect the change of evaluator’s preference when indicators increase. After analyzing the principle of comprehensive evaluation model, this paper does simulation experiments to prove the rationality of the preference curve. By increasing the interpolation points and comparing the evaluator’s preference curves respectively generated by the polynomial interpolation and cubic spline interpolation, a conclusion is reached that cubic spline interpolation is better than the polynomial interpolation, and 4 full-score hyperplanes are to be adopted to get the most rational curve to reflect the change of evaluator’s preference. The main contributions of this paper are the analysis of the rationality of different preference curves under comprehensive evaluation model based on the attribute theory and the finding that the most reasonable curve depend on the selection of different hyperplane S2.
Strategy for Fabricating Wafer-Scale Platinum Disulfide
Xu, Hongjun,Huang, Hsin-Pan,Fei, HaiFeng,Feng, Jiafeng,Fuh, Huei-Ru,Cho, Jiung,Choi, Miri,Chen, Yanhui,Zhang, Lei,Chen, Dengyun,Zhang, Duan,Coileá,in, Cormac Ó,Han, Xiufeng,Chang, Ching-Ra American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.8
<P>PtS<SUB>2</SUB> is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS<SUB>2</SUB> cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS<SUB>2</SUB> thin films in a scalable and controllable manner. Moreover, the PtS and PtS<SUB>2</SUB> phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS<SUB>2</SUB> is an ambipolar semiconductor with a narrow band gap. Moreover, PtS<SUB>2</SUB> also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO<SUB>2</SUB>. Our work presents a relatively simple way of synthesizing PtS<SUB>2</SUB> thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX<SUB>2</SUB> compounds and TMDs which are compatible with modern silicon technologies.</P> [FIG OMISSION]</BR>