http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
건설현장 내 위험작업구역 접근 시 위험도 예측 프로세스
하민우 ( Ha Min-woo ),조유진 ( Cho Yu-jin ),손석현 ( Son Seok-hyun ),한승우 ( Han Seung-woo ) 한국건축시공학회 2020 한국건축시공학회 학술발표대회 논문집 Vol.20 No.2
Accidents in the construction industry are very high compared to other industries, and the number is also increasing steeply every year. Relevant studies were limited for solving the problems. The purpose of this study is to develop a comprehensive risk prediction process for personnel deployed at construction sites on safety management. First of all, the variables were divided into fixed, real-time and working types variables, and the relevant comprehensive data were collected. Second, the probability of a disaster was derived based on the collected data, and weights for each variable were calculated using the dummy regression analysis method using statistical methodology. Lastly, the resulting weighting and disaster probability equation was constructed, and The Final Risk Calculation Formula was developed. The Final Risk Calculation Formula presented in this study is expected to have a significant impact on the establishment of effective safety management measures to prevent possible safety accidents at construction sites
하민우(Ha, Min-Woo),이준영(Lee, Jun-Young),석오균(Seok, Ogyun) 대한전기학회 2024 전기의 세계 Vol.73 No.2
Class II MLCC(multilayer ceramic capacitors)는 첫 번째 페로브스카이트 옥사이드인 BaTiO₃를 유전체로 쓴다. MLCC는 일반 반도체 소자와 비교하면 독특한 에이징, 유전체에 대한 도핑, 등가 직력 저항 (equivalent senries resistance) 및 등가직력 인덕턴스(equivalent series inductance)를 가진다. 대부분 MLCC는 시간에 따라서 변하는 교류 기반 측정이지만 몇몇 제품규격은 직류에서 측정한다. 전 세계적으로 MLCC의 측정하는 기준은 없으나 본 기고문에서 MLCC를 척정하는 방법에 논했다. Class II MLCC(multilayer ceramic capacitors) used the 1st perovskite oxide, BaTiO₃ for dielectrics. The MLCCs had unique characteristics such as aging, doping on dielectrics, equivalent series resistance, and equivalent series inductance compared with conventional semiconductor devices. Electrical measurements of the MLCCs were mostly based on AC which voltage or current changes over time. Some specifications of the MLCCs standed based on DC. Any global standard to measure the MLCCs did not exist. However, we discussed measuring methods for the MLCCs in the manuscript.
하민우(Min-Woo Ha),김수성(Soo-Seong Kim) 대한전기학회 2021 전기의 세계 Vol.70 No.12
전력용 반도체 소자는 전 영역에 온 전류가 고르게 퍼지는 수직형 구조가 적합하다. 하지만 수직형 전력용 반도체 소자 내 액티브 영역의 끝인 메인 접합에 역방향 전계가 집중되어 항복 전압이 열화된다. 이 문제를 개선하기 위하여 액티브 영역을 감싸는 접합 마감 영역이 필요하다. 이 글에서는 실리콘과 4H-SiC 기반 전력용 반도체 소자의 접합 마감 기술에 대하여 설명하였다. A power semiconductor device is suitable for a vertical structure in which on current is evenly spread over the entire region. However, the reverse electric field is concentrated at the main junction, the edge of the active region in the vertical power semiconductor device, and the breakdown voltage is decreased. In order to improve this problem, a junction termination region encircling the active region is required. In this article, the junction termination technologies for silicon and 4H-SiC-based power semiconductor devices were discussed.
높은 항복 전압 특성을 가지는 이중 게이트 AlGaN/GaN 고 전자 이동도 트랜지스터
하민우,이승철,허진철,서광석,한민구,Ha Min-Woo,Lee Seung-Chul,Her Jin-Cherl,Seo Kwang-Seok,Han Min-Koo 대한전기학회 2005 전기학회논문지C Vol.54 No.1
We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.