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최선열(Sun-Youl Choi),이복형(Bok-Hyung Lee),이광호(Gwang-Ho Lee) 한국정보기술학회 2018 한국정보기술학회논문지 Vol.16 No.8
Today, Power amplifier performance has endlessly evolved to new techniques. In the Past, the power amplification module started in the form of a vacuum tube has been developed into a highly integrated MMIC type that has been modernized. In recent years, techniques for increasing the efficiency of power amplification using GaN have been studied. In particular, Airborn radars generally use the X-band, and the amplification module used here requires high power output. Since the radar output power affects radar detection distance closely, an amplification module with high output performance is required to detect the target to a longer distance. In this paper, we will discuss high power amplification module used in X-band. One of the key performance parameters are more than 25W over the whole frequency range. The spurious has 65dBc. The 2nd harmonic is measured about 50dBc, and The 3rd harmonic is measured about 70dBc.
최선열(Sun-Youl Choi),이복형(Bok-Hyung Lee),박병준(Byung-Jun Park) 한국정보기술학회 2020 한국정보기술학회논문지 Vol.18 No.6
In this paper, MFC(Multi Function Chip) Correction algorithm is described with the process of generating control data to correct amplitude for radar antenna unit. In Radar Systems MFC provides Phase shift, Amplitude attenuation, Selection of Tx/Rx, RF Signal amplification, etc. The MFC used in this paper provides digital Amplitude Attenuation. Also an amplitude attenuation resolution of The MFC is 0.5dB and it can be controlled to 31.5dB. by using the correction algorithm mentioned in this paper, it can be corrected about 0.5dB. we will discuss about attenuation correction algorithm of MFC for Radar. Before the correction algorithm, the MFC attenuation error had ±1.75dB. After the Correction algorithm, An error was measured less than ±0.61dB.
위상 배열 안테나 빔 오차 개선을 위한 반도체송수신모듈 크기/위상 보정 알고리즘 설계
최선열(Sun-Youl Choi),이복형(Bok-Hyung Lee),최영조(Young-Joe Choe) 한국정보기술학회 2022 한국정보기술학회논문지 Vol.20 No.5
In multi function radar systems, Transmit/receive module provides amplifying transmit rf signal and receive low noise rf signal, phase shifting, amplitude attenuation, etc. In this paper, among the functions amplitude/phase correction algorithm is described with the process of generating control data to correct amplitude/phase for antenna unit. A MFC(Multi Function Chip) used for phase shifting and amplitude attenuation has 0.5dB(1lsb) attenuation resolution, 5.625°(1lsb) phase shifting resolution. Also, attenuation can be controlled to 31.5dB and phase shifting can be controlled to 360°. But the mfc doesn’t have an accurate 1lsb characterization because of parasitic effect. In this paper correction algorithm will be discussed. With the correction algorithm, It can be corrected to 1lsb. Before the correction algorithm, the mfc error had 3dB/16°. After the correction, An error was measured less than 0.8dB/4°.
0.25 ㎛ GaN HEMT 기술을 이용한 우수한 성능의 X-대역 전력 증폭기
이복형,박병준,최선열,임병옥,고주석,김성찬,Lee, Bok-Hyung,Park, Byung-Jun,Choi, Sun-Youl,Lim, Byeong-Ok,Go, Joo-Seoc,Kim, Sung-Chan 한국전기전자학회 2019 전기전자학회논문지 Vol.23 No.2
본 논문에서는 게이트 길이가 $0.25{\mu}m$인 GaN HEMT 기술을 사용하여 개발된 X-대역 전력 증폭기의 특성을 기술한다. 개발된 X-대역 전력 증폭기는 9~10 GHz의 대역에서 22.7 dB 이상의 소신호 이득과 43.02 dBm(20.04 W) 이상의 포화 출력 전력을 가진다. 최대 포화 출력 전력은 9.5 GHz에서 43.84 dBm (24.21 W)이였다. 전력 부가 효율은 41.0~51.24%의 특성을 얻었으며 칩의 크기는 $3.7mm{\times}2.3mm$이다. 출력 전력 밀도는 $2.84W/mm^2$를 나타내었다. 개발된 GaN 전력 증폭기는 다양한 X-대역 레이더 응용에 적용 가능할 것으로 예상된다. This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.
비대칭 이득증폭 단위셀을 이용한 2-13 GHz 양방향 증폭기
뉴엔반비엣(Van-Viet Nguyen),남효현(Hyohyun Nam),이복형(Bok-Hyung Lee),이문교(Muk-Kyo Lee),최선열(Sun-Youl Choi),송정문(Jeong-Moon Song),박정동(Jung-Dong Park) 대한전자공학회 2018 전자공학회논문지 Vol.55 No.12
본 논문에서는 이득증폭 비대칭 셀 구조가 결합된 양방향 증폭기 (BDGA) 를 제안한다. 기존의 분산 증폭기 (DA) 설계는 덧셈 이득 메커니즘으로 인한 이득 제한을 보여 주지만, 제안된 구조는 2 개의 BDGA 캐스케이드로 인한 곱셈 이득 메카니즘으로부터 향상된 이득을 얻는다. 또한 BDGA의 출력 전력과 증폭기 이득을 동시에 개선하기 위해서 공통 소스 (CS) 와 캐스코드 (Cascode)가 병렬로 구성되도록 단위 이득 셀을 비대칭으로 구현하였다. 제안된 회로 구조는 표준 0.18 μm CMOS로 제작되었는데, 측정 결과 10.3 dB의 전력 이득을 가지며, 3-dB 대역폭은 2 - 13GHz 범위를 커버한다. 측정된 출력 P1dB는 10GHz에서 8.6 dBm이며, 포화 출력전력은 12.2 dBm이다. 구현된 광대역 양방향 증폭기는 1.8 V 전원전압에서 55 mA의 전류를 소비하며 2.2 × 1.3mm²의 칩 면적을 차지한다. In this paper, we present a bidirectional distributed gain amplifier (BDGA) with asymmetric cell combined with a cascade gain boosting structure. While a conventional distributed amplifier (DA) design shows the gain limitation due to the additive gain mechanism, the proposed structure benefits significantly from multiplicative gain mechanism owing to the cascade of two BDGAs. Moreover, the unit gain cells are intentionally designed to be asymmetrical by combining the common source (CS) and the cascode configuration to improve output power and the gain of the BDGA. The proposed architecture is fabricated in a standard 0.18 μm CMOS. The measurement results exhibit the gain of 8.6 dB, and the 3-dB bandwidth covers the 2 - 13 GHz range. The measured output P1dB is 10.3 dBm along with 12.2 dBm of the saturated output power at 10 GHz. The circuit draws a current of 55 mA from a 1.8 V supply and occupies 2.2 × 0.92 mm² of chip area.