http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Large Magnetoresistance in Square-Shaped Hybrid Magnet-Semiconductor Device
홍진기,이긍원,이병찬,K.H. Kim,신경호,김선웅 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.1
We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this eect can be understood in terms of a spatially varying Hall conductivity and a geometrical eect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.
Control of the spin-orbit coupling by gate voltage in semiconductor FET structures
홍진기,이긍원,B.C. Lee,Jehyung Lee,김진상,Jinseo Lee,신경호,Se-young An,주성중 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
We demonstrate that the strength of the spin-orbit (SO) coupling can be controlled systematically by gate voltage (VG) in HgCdTe FET structures. This indicates that the Rashba eect can be controlled by the external bias. The strength of the SO coupling is estimated from the weak antilocalization(WAL) eect. The experimental data are tted by using the D'yakonov-Perel (DP) mechanism, and the SO coupling strength is much larger than those of other materials. This strong Rashba eect is an unique feature of HgCdTe FET, which originates from both strong intrinsic SO coupling of HgCdTe and high structural inversion asymmetry of our device. It provides a great advantage over other materials for spin manipulation in semiconductor spin devices.