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나철훈(Cheol-hun Na),부수일(Su-il Boo) 한국정보통신학회 2021 한국정보통신학회 종합학술대회 논문집 Vol.25 No.2
사물인터넷을 이용하여 인간과 다양한 기기가 상호 연결되어 다양하게 활용되고 있다. 본 연구에서는 ICT를 이용하여 원격지와의 동기 제어시스템을 구축하고 이를 활용한 보행자용 신호시스템을 구현하였다. 제어기 구현을 위해서 PLC 회로를 활용하였으며, 이를 통해 무선 제어신호 송신 및 수신, LED 램프 발광제어, 전원제어 등을 수행하였다. 제어기 및 보행자 전용 신호등 시스템 구축을 통해서 메인 제어기로부터 원격지의 서브 제어기와의 신호 동기가 가능함을 확인하였고, 도로 양쪽에 설치된 보행신호 등 시스템의 램프 신호 동기화를 구현하였다. 이 결과로 1:1 원격제어, 혹은 1:N의 원격 그룹제어가 가능함을 확인하였으며, 이 결과물은 다양한 분야에 활용될 수 있다. Humans and various devices are interconnected using the Internet of Things and are used in various ways. In this study, synchronization control system with remote locations was constructed using ICT, and a signal system for pedestrians was implemented using the system. PLC circuits were used to implement controllers, through which wireless control signal transmission and reception, LED lamp emission control, and power control were performed. It was confirmed that signal synchronization from the main controller to the remote sub-controller was possible by establishing a controller and pedestrian traffic light system, and lamp signal synchronization of the pedestrian traffic light system installed on both sides of the road was implemented. As a result, it was confirmed that 1:1 remote control or I:N remote group control was possible, and this result can be used in various fields.
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AIP법으로 제조한 TiO<sub>2</sub> 광촉매의 냄새성분 제거성능
정운조 ( Woon-jo Jeong ),부수일 ( Su-il Boo ),공춘식 ( Chun-sik Kong ),강상준 ( Sang-jun Kang ),김기중 ( Ki-joong Kim ),안호근 ( Ho-geun Ahn ) 한국환경기술학회 2008 한국환경기술학회지 Vol.9 No.3
In this study, photocatalytic performance of acetaldehyde, methyl ethyl ketone, and furan in circulating closed reactor system was investigated using nanopore-structured TiO<sub>2</sub> film prepared by AIP (arc ion plating) method. Slide glass and wire cloth-typed stainless steel were used as a substrate. TiO<sub>2</sub> film was prepared with varying the flow rate ratio of Ar to O<sub>2</sub> and total gas pressure in AIP system. Optimum substrate temperature, gas pressure, and flow rate of O<sub>2</sub> for formation of thin film was 350℃, 15~20mTorr, and about 100㎤/min, respectively. When flow rate of O<sub>2</sub> was over 100㎤/min, the thickness of the film was saturated and kept to range of 400nm to 600nm even though the flow rate was increased. TiO<sub>2</sub> thin film was uniformly formed to anatase phase, but its peak below 10mTorr was relatively weak. In O<sub>2</sub> flow rate of below 50㎤/min, the reaction of Ti and O<sub>2</sub> did not proceed well due to deficiency of O<sub>2</sub> in chamber. Decomposition activity of the photocatalyst was high in order of acetaldehyde, methyl ethyl ketone, and furan. As a result, stainless steel mesh-typed photocatalyst prepared by AIP method was very efficient to removal of odorous compounds.
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반응성 스퍼터링법으로 제조된 TaN 박막의 특성에 관한 연구
정운조 ( Woon-jo Jeong ),문인섭 ( In-seob Moon ),조순계 ( Soon-kye Cho ),부수일 ( Su-il Boo ),안호근 ( Ho-geun Ahn ) 한국환경기술학회 2007 한국환경기술학회지 Vol.8 No.3
Tantalum nitride(TaN) thin films are attractive for use as the coating of various precision tools which need hardness and adhesion, or the precision thin film resistors, and the diffusion barriers in metal(copper or aluminum)-semiconductor contacts. In this work, we have investigated the mechanical and structural properties of TaN films fabricated by a reactive sputtering technique at different nitrogen partial pressures. From the sputtering results, the optimal values for the substrate temperature and the nitrogen gas ratio were around 100℃ and 20% respectively. Under these conditions, vickers hardness, adhesion force, and sheet resistance were estimated at around 4,000Hv, 30N, 1mΩ/square respectively.
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스텐레스강 평직망을 지지체로 한 TiO<sub>2</sub> 광촉매 제조 및 분해성능
최다영 ( Da-young Choi ),강상준 ( Sang-jun Kang ),김기중 ( Ki-joong Kim ),장승호 ( Seung-ho Jang ),부수일 ( Su-il Boo ),정운조 ( Woon-jo Jeong ),손보균 ( Bo-kyun Sohn ),안호근 ( Ho-geun Ahn ) 한국환경기술학회 2009 한국환경기술학회지 Vol.10 No.3
In this study, TiO<sub>2</sub> photocatalyst supported on stainless steel wire cloth (SSWC), which were pretreated with high thermal oxidation, wet oxidation, and sanding, prepared by sol-gel and AIP (Arc Ion Plating) methods. These catalysts were characterized by N<sub>2</sub> gas adsorption, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Also, decomposition of ethylene and acetaldehyde were investigated by atmospheric closed system circulating reactor. As a results, optimum condition for TiO<sub>2</sub> support on SSWC was obtained by high thermal oxidation at 800℃ for 12hr. Also, catalytic activity of TiO<sub>2</sub>/SSWC catalyst prepared by sol-gel method was higher than AIP method in ethylene oxidation, and acetaldelyde was easier oxidized than ethylene. Furthermore, among the TiO<sub>2</sub>/SSWC catalysts prepared by sol-gel method, the maximum catalytic activity for ethylene oxidation was obtained over 32mesh SSWC, and the optimum loading number was 2 times.
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전자빔 증착법으로 제조된 박막 태양전지용 CuGaS<sub>2</sub> 박막의 특성
정운조 ( Woon-jo Jeong ),문인섭 ( In-seob Moon ),조순계 ( Soon-kye Cho ),김민기 ( Min-ki Kim ),김운섭 ( Woon-sub Kim ),부수일 ( Su-il Boo ),안호근 ( Ho-geun Ahn ),양현훈 ( Hyeon-hun Yang ),박계춘 ( Gye-choon Park ) 한국환경기술학회 2008 한국환경기술학회지 Vol.9 No.2
By EBE(Electron Beam Evaporation) method, Single phase CuGaS<sub>2</sub> thin film with the highest diffraction peak of (112) at diffraction angle(2θ) of 28.8˚ was made at substrate temperature of 70℃, annealing temperature of 350℃ and annealing time of 60min. And second highest (204) peak was shown at diffraction angle of (2θ) of 49.1˚. Lattice constant of a and c of that CuGaS<sub>2</sub> thin film was 5.37Å and 10.54Å respectively. The greatest grain size of the thin film was about 1㎛. The (112) peak of single phase of CuGaS<sub>2</sub> thin film at annealing temperature of 350℃ with excess S supply was appeared with a little higher about 10% than that of no excess S supply. And the resistivity, Hall mobility and carrier concentration at room temperature of p-type CuGaS<sub>2</sub> thin film was 1.4Ω-cm, 15㎠/V·sec and 2.9×10<sup>17</sup>cm<sup>-3</sup> respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS<sub>2</sub> thin film, and the polycrystalline CuGaS<sub>2</sub> thin films were made at these conditions were all p-type.
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