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PCB 캐패시터를 이용한 플라이백 SMPS 출력 리플 저감 대책
김태근(T.G.Kim),정교범(G.B.Chung),이완윤(W.Y.Lee) 전력전자학회 2003 전력전자학술대회 논문집 Vol.2003 No.7(1)
The leakage inductance of the High Frequency Transformer(HFT) in the flyback topology can be used an inductor of the Low Pass Filter(LPF) to reduce ripple and ripple noise in the output voltage. But, the values of leakage inductance and magnetizing inductance in the HFT are within ±20[%] And the operating temperature of the HFT increased by the leakage inductance Therefore, the leakage inductance of the HFT in the flyback topology has minimum and the LPF has non-polarity ceramic capacitor in the output stage. In this paper, the LPF in the flyback topology takes PCB capacitor using double layer of PCB without non-polarity ceramic capacitor Its experimental results show the reduced ripple noise and the reduced ripple in the output stage
질소 분극면을 갖는 N형 질화물반도체의 접촉저항 감소를 위한 산소 플라즈마 효과에 관한 연구
남태양,김동호,이완호,김수진,이병규,김태근,조영창,최연식,Nam, T.Y.,Kim, D.H.,Lee, W.H.,Kim, S.J.,Lee, B.G.,Kim, T.G.,Jo, Y.C.,Choi, Y.S. 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.1
본 논문은 N-face n-type GaN 표면에 산소 플라즈마 처리에 의해서 오믹전극과 접촉 저항을 낮추기 위한 연구를 하였다. 120초 산소 플라즈마 처리후 Ti (50 nm) / Al (35 nm)을 증착한 결과 오믹 전극을 구현하였으며, $1.25{\times}10^{-3}\;{\Omega}cm^2$의 접촉저항을 보였다. 이는 산소 플라즈마 처리가 기존의 플라즈마 처리와 같이 질소결원이 발생하였기 때문이다. 이를 통해 쇼트키장벽 높이(SBH)이 낮아지게 되었고, 오믹 전극및 플라즈마 처리를 안 한 경우보다 더 낮은 접촉저항의 결과를 획득하였다. We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.