인공 유방 확대술을 받은 환자의 유방암 치료 시 크기에 따른 반대 측 유방의 피폭 선량 및 차폐 효율 평가

김종욱,우헌,정현학,김경아,김찬용,유숙현,Kim, Jong Wook,Woo, Heon,Jeong, Hyeon Hak,Kim, Kyeong Ah,Kim, Chan Yong,Yoo, Suk Hyun 대한방사선치료학회 2014 대한방사선치료학회지 Vol.26 No.2

목 적 : 인공 유방 확대술을 받은 환자가 유방암 방사선치료를 받을 경우 유방의 크기별로 치료 조사야와의 거리에 따른 치료반대 측 유방조직에 피폭되는 선량 및 차폐의 효율성을 평가해 보고자 한다. 대상 및 방법 : 인체팬텀(Rando-phantom)을 이용하여 유방 모형의 크기별 (200 cc ~ 500 cc) CT영상을 획득한 후 크기 별로 일 선량 180 cGy의 왼쪽 유방암 방사선 치료계획을 세웠다. 유방 모형이 커질수록 치료 반대 측 유방모형의 표면과 X선의 진행지점 사이에 발생하는 거리가 가까워지게 설정하였고, 체표에 입사하는 선속중심축을 기준으로 3 cm, 6 cm 떨어진 점에서 반대측 유방 표면에 수직으로 내린 거리를 각 A point, B point로 설정하였다. 그리고 유두지점에서 외측으로 2 cm 되는 점을 C point, 체표중앙에서 외측으로 6 cm 되는 점을 D point로 설정하였다. 유방 모형의 크기별로 각 측정지점에 MOSFET을 부착하여 6 MV, 10 MV, 15 MV의 X선 에너지로 조사하여 측정하였다. 이와 동일한 조건으로 납 2 mm의 두께로 차폐한 후의 선량 값과 납 2 mm 아래에 bolus 3 mm를 부착하여 차폐한 후의 선량 값을 얻었다. 결 과 : 유방 모형이 200 cc에서 500 cc로 커짐에 따라 유방 모형의 표면과 X선의 진행지점과의 거리가 A point에서는 2.14 cm에서 최대 1.23 cm으로 근접하였고 B point에서는 2.55 cm에서 1.31 cm으로 근접하였다. 유방 모형의 크기에 따라 180 cGy 기준으로 200 cc 대비 500 cc의 산란선 측정값이 A point에서 3.22 ~ 4.17%, B point에서 4.06 ~ 6.22%, C point는 0.4~0.5% 증가하였고, D point에서는 크기별로 측정값의 차이가 0.4% 미만이었다. X선 에너지가 커짐에 따라 6 MV 대비 15 MV X선에서 180cGy 기준으로 산란선이 A point에서는 4.06~5%, B point에서는 2.85~4.94%, C point에서는 0.74~1.65% 증가하였고, D point에서는 측정값 차이가 0.4% 미만이었다. 차폐체로 납 2 mm를 사용하였을 경우 A와 B point에서 평균 9.74%, C point에서 2.8%, D point에서 1% 미만의 산란선 감소효과가 있었고, 납과 bolus를 함께 차폐하였을 경우 A와 B point에서 평균 9.76%, C point에서 2.2%, D point에서 1% 미만의 산란선 감소효과가 있었다. 결 론 : 일반적으로 인공 유방 확대술을 받은 환자의 경우 유방의 크기에 따라 치료 반대편 유방 표면과 치료조사야의 거리가 가까울수록 유방 표면이 받는 산란선이 증가하였다. 동일한 크기의 유방 모형에서는 사용 X선 에너지가 커질수록 산란선에 의한 피폭이 증가하는 경향을 보였고, 이는 사용 X선의 에너지 선택에 있어 유방암의 방사선 치료계획에서 허용되는 한도에서는 낮은 X선 에너지의 사용이 반대측 유방의 선량 감소에 유리할 것으로 여겨진다. Purpose : To evaluate the dose on a contralateral breast and the usefulness of shielding according to the distance between the contralateral breast and the side of the beam by breast size when patients who got breast implant receive radiation therapy. Materials and Methods : We equipped 200 cc, 300 cc, 400 cc, and 500 cc breast model on the human phantom (Rando-phantom), acquired CT images (philips 16channel, Netherlands) and established the radiation treatment plan, 180 cGy per day on the left breast (EclipseTM ver10.0.42, Varian Medical Systems, USA) by size. We set up each points, A, B, C, and D on the right(contralateral) breast model for measurement by size and by the distance from the beam and attached MOSFET at each points. The 6 MV, 10 MV and 15 MV X-ray were irradiated to the left(target) breast model and we measured exposure dose of contralateral breast model using MOSFET. Also, at the same condition, we acquired the dose value after shielding using only Pb 2 mm and bolus 3 mm under the Pb 2 mm together. Results : As the breast model is bigger from 200 cc to 500 cc, The surface of the contralateral breast is closer to the beam. As a result, from 200 cc to 500 cc, on 180 cGy basis, the measurement value of the scattered ray inclined by 3.22 ~ 4.17% at A point, 4.06 ~ 6.22% at B point, 0.4~0.5% at C point, and was under 0.4% at D point. As the X-ray energy is higher, from 6 MV to 15 MV, on 180 cGy basis, the measurement value of the scattered ray inclined by 4.06~5% at A point, 2.85~4.94% at B point, 0.74~1.65% at C point, and was under 0.4% at D point. As using Pb 2 mm for shield, scattered ray declined by average 9.74% at A and B point, 2.8% at C point, and is under 1% at D point. As using Pb 2 mm and bolus together for shield, scattered ray declined by average 9.76% at A and B point, 2.2% at C point, and is under 1% at D point. Conclusion : Commonly, in case of patients who got breast implant, there is a distance difference by breast size between the contralateral breast and the side of beam. As the distance is closer to the beam, the scattered ray inclined. At the same size of the breast, as the X-ray energy is higher, the exposure dose by scattered ray tends to incline. As a result, as low as possible energy wihtin the plan dose is good for reducing the exposure dose.

RF 파워에 따라 스퍼터된 Al doped ZnO 박막의 구조적, 광학적, 전기적 특성

김종욱,김덕규,김홍배,Kim, Jong-Wook,Kim, Deok-Kyu,Kim, Hong-Bae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

Thin-Type 초음파모터의 설계 및 제작

김종욱,박충효,정현호,정성수,박태곤,Kim, Jong-Wook,Park, Choong-Hyo,Chong, Hyon-Ho,Jeong, Seong-Su,Park, Tae-Gone 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.7

In this paper, the characteristics of a thin-type ultrasonic motor generating elliptical displacements analyzed by FEM are presented, and then fabrication of the motor is then described. The structure of the motor consists of sixteen ceramic pieces attached to the upper and bottom surfaces of an elastic body. The principle of the motor is to apply alternating voltages which have a 90 phase difference to the attached ceramics, and then elliptical displacements are generated at four edges of the elastic body. Then the rotor is moved by the elliptical displacements. In the case of a ceramic thickness of 1.5, the highest speed was obtained at 79 kHz. In the case of a ceramic thickness of 2 mm, the highest speed was obtained at 77.5 kHz. Consequently, the speed and torque of the ultrasonic motor (USM) increased linearly with increasing applied voltage.

기공형성에 의한 SiOCH 박막의 유전 특성

김종욱,박인철,김홍배,Kim, Jong-Wook,Park, In-Chul,Kim, Hong-Bae 한국반도체디스플레이기술학회 2009 반도체디스플레이기술학회지 Vol.8 No.3

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

RF magnetron sputtering법으로 형성된 ZnO 박막의 투명반도체 특성

김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.1

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

정사각틀 초음파 모터의 변위 특성

김종욱,박충효,임정훈,정성수,김명호,박태곤,Kim, Jong-Wook,Park, Choong-Hyo,Lim, Jung-Hoon,Jeong, Seong-Su,Kim, Myong-Ho,Park, Tae-Gone 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9

A novel design of a simple square-frame USM (ultrasonic motor) was proposed. The stator of the motor consists of a square-frame shape elastic body and four rectangular plate ceramics. The four ceramics were attached to inner surfaces of the square frame elastic body. The same phase voltages were applied to the ceramics on horizontal surfaces, and 90 degree phase difference voltage were applied to the ceramics on vertical surfaces. To find a model that generates elliptical motion at outside of the stator, the finite element analysis program ATILA was used. The analyzed results were compared to the experimental results. As result, the model EL10EH3ET0.5CL4 which generates the maximum elliptical displacement was chosen by analyzing the resonance mode according to changes in frequency.

Reaction Gas 변화에 따라 스퍼터된 Ga Doped ZnO 박막의 특성

김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.4

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

RF magnetron sputtering법으로 제조한 Al doped ZnO 박막의 산소함량과 압력변화에 따른 전기적 특성 변화

김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.4

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

BTMSM/O₂ 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성

김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

Coxiella burnetii감염과 가와사끼병과의 관련성에 관한 연구

김종욱,이해용,이원영,Kim, Jong Wook,Lee, Hae Yong,Lee, Won Young 대한소아감염학회 1996 Pediatric Infection and Vaccine Vol.3 No.2

Purpose : Coxiella burnetii is a well-known causative agent of granuolmatous inflammation and an inducer of morphological change and transformation of human B lymphocyte in vitro. Coxiella burnetii manifests with several clinical symptoms depending upon the organs that are involved. We therefore undertook to clarify the association of Kawasaki disease and Coxiella burnetii. Subjects and Methods : The patient's sera were tested for antibodies specific for Coxiella burnetii, using indirect fluorescent antibody technique(IFA). We compared Coxiella burnetii infection with 3 groups of patients, group 1 (Kawasaki disease), group 2 (other febrile disease) and group 3 (control group). Results : 1) In children with Kawasaki disease (group 1), 93% of the patient tested positive for Coxiella burnetii. 2) In group 2 children, 20% of the patient tested positive for Coxiella burnetii. 3) In group 3 children, 10% of the patient tested positive for Coxiella burnetii 4) There were significant higher positive rate for Coxiella burnetii in Kawasaki disease than group 2 and group 3 (p<0.05). Conclusions : We concluded that our cases of Kawasaki disease were associated with Coxiella burnetii infection. Further studies will be needed to understand the precise role of Coxiella infection in Kawasaki disease.