http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
자기 저항 헤드의 이중 자기 교환 바이어스를 위한 NiFe / TbCo / Si₃N₄ 박막제조
김영채(Y. C. Kim),오장근(J. G. Oh),조순철(S. C. Jo) 한국자기학회 1994 韓國磁氣學會誌 Vol.4 No.3
NiFe /TbCo /Si₃N₄ thin films were fabricated, which can be employed as dual(longitudinal and transverse) biased magnetoresistive elements utilizing surface magnetic exchange at the interface of NiFe /TbCo films. When Tb area percent was 36 % and substrate bias was not applied, magnetic exchange fields of 100 ~ 180 Oe were obtained. The thicknesses of NiFe, TbCo and Si₃N₄(Protective layer) were 470 Å, 2400 Å and 600 Å, respectively. Magnetoresistance ratio of 1.45 % was obtained using NiFe films fabricated with 1000 W power and 2.5 mTorr of Ar pressure. The MR ratio of microstructured elements was reduced to 1.31 % and the MR response curves were shown not to saturate due to demagnetizing fields of the elements. When elements were fabricated with 36˚ of misalignment with respect to the exchange field direction using films having 150 Oe exchange field, MR response curve was shifted by 85 Oe, and the operating point of the device shifted to the linear region of the response. Also, the Barkhausen noise was eiminated due to longitudinal bias field originating from the exchange field.
열 분해법으로 제조된 Bi 치환 자기 가넷 박막의 광자기적 성질
김영채(Y. C. Kim),조순철(S. C. Jo) 한국자기학회 1993 韓國磁氣學會誌 Vol.3 No.2
Bi_xDy_(3-x)Al₁Fe₄O₁₂ (x=1, 1.2, 1.5) magnetic garnet films were fabricated on the glass substrates by pyrolysis method. As the Bi content was increased, the saturation magnetization increased from 5 emu / cc to 11 emu / cc and all the films showed perpendicular magnetic anisotropy. As the content of Bi was increased, Faraday rotation angle (θ_F) at 780 ㎚ of the films increased from 0.11° / ㎛ to 0.20° / ㎛ and the garnet crystallization temperature decreased from 660 ℃ to 630 ℃. Also, the coercivity (Hc) decreased from 1200 Oe to 600 Oe and the grain sizes increased. Hc decreased from 1750 Oe to 1200 Oe and θ_F increased due to the interference of the reflected laser light as the thickness of the films increased from 2000 Å to 4000 Å.