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양승부,최교창,이상진,정영진,임한혁,한효상,황인철,조환성 순천향의학연구소 2005 Journal of Soonchunhyang Medical Science Vol.11 No.1
Objective : Our purpose of this study is to evaluate the effectiveness of the transcatheter arterial embolization for the management of abnormal uterine bleeding. Materials and Methods : 14 patients with massive or recurrent uterine bleeding underwent percutaneous transcatheter arterial embolization between February 2003 and September 2004. We reviewed 14 cases of uterine artery or internal iliac artery embolization using gelfoam or PVA particles. Results : Good management of uterine bleeding was achieved in 13 of 14(93%) cases. The cause of abnormal uterine bleeding was myoma(5 case), post D & E bleeding(3), acquired vascular malformation(3), pseudoaneurysm(1), adenomyosis(1), and endometrial hyperplasia(1). Conclusion : Transcatheter artery embolization is an effective and life-saving procedure in massive or recurrent uterine bleeding. Early diagnosis and prompt transcatheter arterial embolization is a useful mangement of uterine bleeding.
( Sang Hyeok Im ),( Dong Hwan Kim ),( Young Hoon La ),( Nam Jin Kim ),( Cha Won Hwang ),( Jae Min Cha ),( Bong Ki Ryu ) 대한금속재료학회 ( 구 대한금속학회 ) 2010 재료마당 Vol.23 No.3
This study looks at crystallization and sintering behavior in B2O3 containing Li2O-Al2O3-SiO2 glass powder. The sintered sample was produced with glass powders measuring 44 μm. The relative density and transmittance of the sintered samples showed the highest value at the temperature of 650°C. At temperatures higher than 650°C, crystal growth occurred to decrease the densification of B2O3-Li2O-Al2O3-SiO2 (BLAS) glass powder. The main crystalline phase in the glass powder was a-spodumene. From non-isothermal differential thermal analysis, the crystallization of particles (Φ=44 μm) was observed at 640°C to 684°C with respect to the heating rate. The activation energy of crystallization (E(C)) and the Avrami constant (n) calculated by Kissinger and Ozawa equations indicated that the surface and the bulk crystallization occurred simultaneously in the glass. The optimum sintering temperature of this glass powder was 650°C without crystal growth of β-spodumene, although nucleation or nano-crystal growth occurred.
FRP가 매립보강된 철근콘크리트 보의 내화성능 향상에 관한 연구
임상혁 ( Im Sang-hyeok ),서수연 ( Seo Soo-y Eon ) 한국구조물진단유지관리공학회 2021 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.25 No.1
본 논문에서는 NSM (Near-Surface-Mounted) FRP로 강화 된 철근 콘크리트 보에서 내화보드 두께 및 접착제 종류에 따른 내화 성능을 실험하였다. 이를 위해 NSM FRP가 적용된 철근 콘크리트 보를 내화보드로 보강 한 후 고온 노출 실험을 진행하였다. 연구 결과 내화보드의 두께를 증가 시키면 내화 성능이 증가하고 노출 온도 760℃까지 에폭시는 유리 전이 온도에 도달하지 않는 것으로 나타났다.
FRP가 매립보강된 철근콘크리트 보의 내화성능 향상에 관한 연구
임상혁 ( Im Sang-hyeok ),서수연 ( Seo Soo-y Eon ) 한국구조물진단유지관리공학회 2021 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.25 No.1
본 논문에서는 NSM (Near-Surface-Mounted) FRP로 강화 된 철근 콘크리트 보에서 내화보드 두께 및 접착제 종류에 따른 내화 성능을 실험하였다. 이를 위해 NSM FRP가 적용된 철근 콘크리트 보를 내화보드로 보강 한 후 고온 노출 실험을 진행하였다. 연구 결과 내화보드의 두께를 증가 시키면 내화 성능이 증가하고 노출 온도 760℃까지 에폭시는 유리 전이 온도에 도달하지 않는 것으로 나타났다.
FRP가 매립보강된 철근콘크리트 보의 내화성능 향상에 관한 연구
임상혁 ( Im Sang-hyeok ),서수연 ( Seo Soo-y Eon ) 한국구조물진단유지관리공학회 2021 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.25 No.1
본 논문에서는 NSM (Near-Surface-Mounted) FRP로 강화 된 철근 콘크리트 보에서 내화보드 두께 및 접착제 종류에 따른 내화 성능을 실험하였다. 이를 위해 NSM FRP가 적용된 철근 콘크리트 보를 내화보드로 보강 한 후 고온 노출 실험을 진행하였다. 연구 결과 내화보드의 두께를 증가 시키면 내화 성능이 증가하고 노출 온도 760℃까지 에폭시는 유리 전이 온도에 도달하지 않는 것으로 나타났다.
이상혁(Sang-Hyeok Lee),임상길(Sang-Gil Im),이상훈(Sang-Hun Lee),강필순(Feel-Soon Kang),조수억(Su-Eog Cho),박성준(Sung-Jun park) 전력전자학회 2011 전력전자학술대회 논문집 Vol.2011 No.7
본 논문에서는 신재생 에너지를 전력 계통에 효율적으로 연계시키기 위한 요소 기술로 Filter 대신 DFT 기법을 사용한 고정밀 계측에 대해 제안한다. 일반적으로 Filter를 사용할 경우 원신호의 위상 지연, 크기 감소 같은 신호 왜곡으로 정확한 제어가 어려우나, 제안된 DFT 기법을 사용하면 기존 문제점을 해결 가능하다. 따라서 본 논문에서 제안된 DFT 기법은 PSIM 을 이용한 시뮬레이션과 실험을 통해 제안된 알고리즘의 타당성과 우수성을 검증하였다.
1/<i>f</i> noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer
Im, Ki-Sik,Choi, Jinseok,Hwang, Youngmin,An, Sung Jin,Roh, Jea-Seung,Kang, Seung-Hyeon,Lee, Jun-Hyeok,Lee, Jung-Hee Elsevier 2019 MICROELECTRONIC ENGINEERING Vol.215 No.-
<P><B>Abstract</B></P> <P>We investigate the DC and 1/<I>f</I> noise properties in Al<SUB>0.25</SUB>Ga<SUB>0.75</SUB>N/GaN high-electron mobility transistors (HEMTs) with two types of 2 μm-thick periodically carbon-doped GaN buffer layer (PC-doped GaN buffer) with and without inserting the 30 nm-thick Al<SUB>0.05</SUB>Ga<SUB>0.95</SUB>N back barrier layer between the GaN channel layer and the PC-doped GaN buffer. The PC-doped GaN buffer layer consists of multiple layers of 12 nm-thick C-doped GaN layer with doping concentration of 1 × 10<SUP>18</SUP> cm<SUP>−3</SUP> and 50 nm-thick undoped GaN layer with unintentional n-typing concentration of 2 × 10<SUP>16</SUP> cm<SUP>−3</SUP>. A reference AlGaN/GaN HEMT with 2 μm-thick highly-resistive GaN buffer layer without C-doping is also fabricated for comparison. Similarly to the reference AlGaN/GaN HEMT, the AlGaN/GaN HEMTs with PC-doped GaN buffer show typical 1/<I>f</I> noise characteristics mainly due to the trapping effects at the AlGaN/GaN interface from subthreshold region to strong-accumulation region, which indicates that the deep trapping effects in the PC-doped GaN buffer layer is negligible, and experience the correlated mobility fluctuations (CMF), which is convinced from the drain current power spectral density (PSD) versus drain current. At off-state (deep-subthreshold region), on the other hand, the HEMTs with the PC-doped GaN buffer layer exhibit 1/<I>f</I> <SUP>2</SUP> noise characteristics, which are closely related to the generation-recombination (g-r) noise caused by the spatial trapping/detrapping process between the deep acceptor in the C-doped layer and the shallow donor in the undoped layer in the PC-doped GaN buffer, while the reference HEMT still shows typical 1/<I>f</I> noise characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Noise characteristics in AlGaN/GaN HEMTs with/without PC-doped buffer layer were investigated. </LI> <LI> PC-doped buffer layer consists of 12 nm-thick carbon-doped GaN and 50 nm-thick un-doped GaN. </LI> <LI> All devices exhibited 1/<I>f</I> noise properties and CMFs from subthreshold to strong-accumulation. </LI> <LI> At off-state, PC-doped buffer devices exhibited 1/<I>f</I> <SUP>2</SUP> noise properties at frequency > 40 Hz. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
6.5% efficient perovskite quantum-dot-sensitized solar cell
Im, Jeong-Hyeok,Lee, Chang-Ryul,Lee, Jin-Wook,Park, Sang-Won,Park, Nam-Gyu Royal Society of Chemistry 2011 Nanoscale Vol.3 No.10
<P>Highly efficient quantum-dot-sensitized solar cell is fabricated using <I>ca.</I> 2–3 nm sized perovskite (CH<SUB>3</SUB>NH<SUB>3</SUB>)PbI<SUB>3</SUB> nanocrystal. Spin-coating of the equimolar mixture of CH<SUB>3</SUB>NH<SUB>3</SUB>I and PbI<SUB>2</SUB> in γ-butyrolactone solution (perovskite precursor solution) leads to (CH<SUB>3</SUB>NH<SUB>3</SUB>)PbI<SUB>3</SUB> quantum dots (QDs) on nanocrystalline TiO<SUB>2</SUB> surface. By electrochemical junction with iodide/iodine based redox electrolyte, perovskite QD-sensitized 3.6 μm-thick TiO<SUB>2</SUB> film shows maximum external quantum efficiency (EQE) of 78.6% at 530 nm and solar-to-electrical conversion efficiency of 6.54% at AM 1.5G 1 sun intensity (100 mW cm<SUP>−2</SUP>), which is by far the highest efficiency among the reported inorganic quantum dot sensitizers.</P> <P>Graphic Abstract</P><P>Highly efficient perovskite quantum-dot-sensitized solar cell. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1nr10867k'> </P>