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Characterization of TIN barriers against Cu diffusion by capacitance-voltage measurement
Rha, Sa-Kyun,Lee, Seung-Yun,Lee, Won-Jun,Hwang, Yong-Sup,Park, Chong-Ook,Kim, Dong-Won,Lee, Youn-Seoung,Whang, Chung-Nam 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
Sputtered TiN was studied as a diffusion barrier in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO_2/Si multilayer structures using various characterization methods, and their sensitivities for detecting breakdown of the barrier were compared. It was confirmed by scanning electron microscopy and Auger electron spectroscopy that breakdown of the TiN barrier occurred through out-diffusion of Si in addition to in-diffusion of Cu. Breakdown temperatures varied by more than 100℃ depending on characterization methods, and capacitance-voltage (C-V) measurement was most sensitive for detecting the failure of the TiN barrier. The effects of rapid thermal annealing (RTA) on barrier properties of TiN were investigated, and it was found by C-V measurement that the TiN(400nm) RTA treated at 700℃ in a NH_3 ambient was stable up to 590℃ for 2 h, while the reference TiN (400nm) was stable up to 450℃ for 2 h.
Thermodynamic Assessment of the Pbo-Zro_2 System
Koo, Bon-Keup,Liang, Pian,Seifert, Hans Ju¨rgen,Aldinger, Fritz 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
The thermodynamic properties and phase diagram of the PbO-Zro_2 system have been critically assessed using the Thermo-Cale program. Excess Gibbs energies were expressed by Redlich-Kister polynomials for the solid phases, by the two-sublattice ionic liquid model for the liquid phase and by the compound energy model for the solid solution phase. All solid phases were treated as stoichiometric compounds.
朴仁龍 대전산업대학교 반도체기술연구소 2000 半導體技術硏究所報 Vol.2 No.-
등방성 영구자석의 제조과정에서 발생되고 있는 barium hexaferrite 폐 자석으로 소결체를 제조하여 물리적, 자기적 특성을 조사하였다. 소결체는 XRD, XRF, SEM 및 자기적 성질을 측정하였다. 폐 영구자석을 분쇄하고 조립화하여 폐 영구자적 분말 과립과 시판용 과립을 일정비율로 혼합. 성형하고 소결하였다. 폐 영구자석 분쇄분말의 함량에 따라 자기적 특성은 점차 감소하지만, 소결 온도 1150~1200℃에서 영구자석으로서 요구되는 자기적 특성값을 나타내었다. Magnetic and physical properties of sintered bodies prepared from waste sintered barium hexaferrite magnets which were come from fabrication process of isotropic permanent magnets were investigated. The properties of the sintered bodies were characterized by XRD, XRF, SEM, and BH curve tracer. After the waste permanent magnets were milled and granulated, the granules of the waste permanent magnet powders and the commercial granules were mixed with various proportions, pressed, and sintered. Although the magnetic properties were decreased gradually with the content of waste magnet powder, the magnetic characteristics of the sintered magnets at 1150~1200℃ were comparable to those required for isotropic permanent magnets.
Performance of OCM/OTD 16 QAM Signal with SC diversity Detection in Rician Fading Channel
Kim, Eon Gon 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
We have analyzed the error performance of 16 QAM with Optimum Code Mapping (OCM) and Optimum Threshold Detection (OTD) in Rician fading channel with and without the Selective Combining (SC) diversity technique. The error performance of OCM with OTD is compapred to that of Conventional Code Mapping (CCM) in Rician fading channel. With the result of analysis, it is found that the proposed OCM with OTD is superior to CCM with CTD. Adoption of diversity technique with the proposed OCM with OTD can be considered as a good countermeasure for the Rician fading under the Personal Communication System (PCS) environment.
LEE, M. H.,PARK, K. Y.,KIM, S. T.,CHUNG, S. H,MOON, D. C 대전산업대학교 반도체기술연구소 2000 半導體技術硏究所報 Vol.2 No.-
In this study, we observed optically pumped stimulated emission at room temperature in quasibulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and l-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power of I_th=2MW/㎠ for one set of stimulated emissions.
부유대역 용융응고법으로 제조된 YBa_2Cu_3O_x 산화물초전도체의 미세구조와 전기적 특성
노태형,송정환,장규철,한이섭,김소정,구본급,김호기 대전산업대학교 반도체기술연구소 2000 半導體技術硏究所報 Vol.2 No.-
The YBa_2Cu_3O_x-20 wt% Y_2BaCuO_5 composition designed in YBCO system was synthesized by solid state reaction method. The optimum condition of hot zone temperature and growth rate in floating-zone melt were 1080 ℃ and 2.5 mm/hour, respectively. In samples growth as these condition, the low angel boundaries in grain direction and small amount of amorphous phase known as decreasing characteristics of superconducting materials between grain boundaries in microstructure are investigated by polarized light microscopy on the whole. The critical current density(Jc) at 77k of sample using powder fabricated with no CeO_2 and doped 5 wt%CeO_2 were 8,000 A/㎠(Jc : 561A) and 12,000 A/㎠(Jc: 826A) at 0 T by direct current transport method, respectively.
VSB 전송방식 HDTV 수신기의 위상 추적 루프 설계
정중완,이재흥 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
본 논문은 VSB 전송방식의 HDTV 수신기에 입력되는 신호의 위상잡음 및 이득오차를 없애주는 위상 추적 루프의 하드웨어의 부담을 줄이면서 넓은 선형영역을 가질 수 있는 알고리즘을 제시하고 0.8㎛ SOG(See Of gate) 공정으로 칩을 제작하였으며 인터페이스 카드를 이요하여 테스트한 결과 올바르게 동작됨을 검증하였다. In this paper, we designed the PTL(phase Tracking Loop) with the Algorithm-which can reduce the gate counts and improve the frequency linearity-that get rid of the phase and gain error in VSB transmission receiver for terrestrial digital broadcasting. The test chip is fabricated by using 0.8㎛ SOG technology and then verified the tested result by using Interface card.
Kim, Chinkyo,Yang, Min,Lee, Wonsang,Yi, Jaehyung,Kim, Sungwoo,Choi, Yoonho,Yoo, Tae-Kyung,Kim, Seon Tai 대전산업대학교 반도체기술연구소 2000 半導體技術硏究所報 Vol.2 No.-
Heteroepitaxial GaN film was grown on sapphire (0001) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy and cathodoluminescence that there were microstructural inhomogeneous areas showing suppressed luminescence characteristics compared with the surrounding matrix. They were presumed to be induced by polarity-inverted domains identified on the basis of the chemical inertness and heavily doped characteristics manifested in cathodoluminescence spectra.
2.45GHz ISM 대역의 송신 전력 제어를 위한 전력 검출 기법 비교 연구
정명래,이상원,김학선,이윤현,이형재 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
본 논문에서는 2.45GHz ISM 대역의 전력 제어시 추정 오차를 줄이기 위하여 콘덴서를 이용한 직접 결함 전력 검출기와 방향성 결합기에 의한 전력 검출기를 설계하여 전압 감도, 대역폭, 기판 크기 등의 특성을 비교. 분석하였다. 측정한 결과, 전압 감도는 입력 전력이 -50dBm 에서 -25dBm까지는 전압 감도가 거의 비슷하지만 -25dBm에서 -10dBm까지는 방향성 결합기에 의한 전력 검출기의 전압 감도가 최대 3.5㎶/㎼ 정도 우수하며, 대역폭은 방향성 결합기에 의한 전력 검출기가 콘덴서를 이용한 직접 결합 전력 검출기보다 63MHz 더 넓었다. 그러므로 전력 제어를 위한 검출기 선정시에 송신기의 출력 레벨이 -20dBm 이하인 경우는 특성이 비슷하므로 기판 크기를 줄이기 위해서는 콘덴서를 이용한 전력 검출기를 선정하는 것이 좋고, -20dBm 이상 또는 광대역의 경우는 전압 감도를 고려하여 방향성 결합기에 의한 전력 검출기를 선정하는 것이 추정 오차를 줄일 수 있다. In this paper, we designed the power detector with the capacitor to decrease the estimation error and directional coupler which are used in 2.45GHz ISM band, also compared and analyzed the characteristics of the power sensitivity to estimate the performance of detector, the bandwidth and the printed circuit board size. As the results, their voltage sensitivity is constant from -50dBm to -25dBm which is the input power, but the detector composed by the directional coupler is superior about 3㎶/㎼ than that by the single diode from -25dBm to -10dBm and its bandwidth is wider about 63MHz than the directional coupling power detector with the capacitor. Therefore when the output level of transmiter is below -20dBm, the power detector with the capacitor had better be selected as the detector for the power control to reduce the area because of the similar characteristics, and above -20dBm or in the wide band system, the estimation error can be eliminated by the selection of directional coupler considered the voltage sensitivity for the power detector.
VSB 전송 방식에서의 LMS 알고리듬과 Stop and Go 알고리듬을 혼합한 디지털 채널 등화기 설계
이주용,--,이재흥,-- 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
In this paper, we designed a equalizer that removed the multipath of channel in 8-VSB transmission receiver. After doing the initial equalization with "LMS(Least Mean Square)" algorithm, this equalizer used "Stop-and-Go" algorithm, Because of estimating SER(Symbol to Error Ratio) every a training sequence. This can positively cope with transformation of channel and becuase of using fast clock than symbol-clock(10.76Mhz). We are able to reduce a multiplier.