http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Zhuang-hao Zheng,Jing-ting Luo,Feng Li,Guang-xing Liang,Ping Fan 한국물리학회 2019 Current Applied Physics Vol.19 No.4
In this work, a new idea of organic-inorganic hybridization was proposed to fabricate flexible p-type - Sb2Te3/ CH3NH3I thin films. The CH3NH3I has a strong adsorption which can promote the growth of organic molecules, improve the crystallization, and finally increase electrical conductivity. Post-annealing of the fabricated films increased the phonon scattering, thus resulting in a reduction of thermal conductivity and an increased ZT value. The annealed hybrid-composite film showed a significant enhancement in thermoelectric performance, with a maximum ZT value of 0.94 at a temperature of 413 K, which is twice as large as that of the as-deposited film.
Ping Fan,Zhuang-Hao Zheng,Jing-Ting Luo,Guang-Xing Liang,Dong-Ping Zhang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
In this study, AZO thin films prepared by direct current reactive magnetron sputtering using a Zn-Al alloy target and In with varied content were doped through the prefabricated layer doping method in order to optimize their thermoelectric properties. The effects of In content on the room temperature microstructure and thermoelectric properties of the AZO thin films were investigated. It was found that the absolute value of the Seebeck coefficient of the thin films increases stably after In doping and reaches 153 μV·K−1 when the In content is 0.71%. Though the electrical conductivity of In-doped thin films is smaller than those of the un-doped films, the power factor of the thin films shows a significant increase after In doping with a maximum value of 2.22 × 10−4 W·m−1·K−2, which is several times that of the un-doped films.