http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Zhenjie Li,Xuezhi Yang,Jun Ma,Mingfei Ban,Yiqi Liu 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.3
This paper proposes a main-auxiliary cooperative receiving coil (MA-coil) with a lower space occupation rate and a simple control based on the time-sharing working principle, which can effectively improve the anti-misalignment capability of a dynamic wireless charging (DWC) system. First, the structure and circuit topology of the MA-coil are designed. The two auxiliary coils (A-coil) are connected in reverse series and symmetrically placed on both sides of the main coil (M-coil). Second, the output performance of the MA-coil in the y-direction is calculated based on the time-sharing working principle. The A-coil works by itself and enhances the output power when side shift occurs. Third, the most suitable ratio of coil width w M and w A is determined. The anti-misalignment performance and the effective side shift range are compared through simulation between the MA-coil in this case and the square coil. Finally, an experimental prototype is built to verify the feasibility of the proposed structure, and experimental results obtained from the prototype are basically consistent with the theoretical analysis. The anti-misalignment capability of the MA-coil is more than 20% higher than that of the square coil.
Li Juan,Guo Xiaozhu,Wang Gui,Zhou Zhenjie,Sun Xuemei 한국식물생명공학회 2023 Plant biotechnology reports Vol.17 No.5
Chicory is consumed worldwide and is an important commercial crop. However, excess lignin deposition may reduce its quality. The comprehension of the molecular mechanism underlying the biosynthesis of lignin in chicory is currently inadequate. To address this, an integrative analysis of the metabolome and transcriptome profiles was performed in chicory sprout at three different stages. A total of 706 metabolites were identified, with cinnamic acid, ferulic acid, coniferaldehyde, and sinapaldehyde enriched during the growth of chicory sprouts. This suggested that these four metabolites may affect the growth of chicory sprouts. Transcriptome analysis demonstrated that the expression of most of the differentially expressed genes (DEGs) involved in lignin biosynthesis was up-regulated during chicory growth. Importantly, the metabolite and gene expression profiles were closely correlated during sprout development, especially in association with lignin biosynthesis. The results will serve as a reference for lignin biosynthesis in chicory and may also assist biologists in improving chicory quality.
Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory
Zhenjie Tang,Dongqiu Zhao,Huiping Hu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.2
Pt/Al2O3/La2Si5Ox/SiO2/Si charge trap memory capacitors were prepared, in which the La2Si5Ox film was used as thecharge trapping layer, and the effects of post annealing atmospheres (NH3 and N2) on their memory characteristicswere investigated. La2O3 nanocrystallites, as the storage nodes, precipitated from the amorphous La2Si5Ox film duringrapid thermal annealing. The NH3 annealed memory capacitor showed higher charge storage performances thaneither the capacitor without annealing or the capacitor annealed in N2. The memory characteristics were enhancedbecause more nitrogen was incorporated at the La2Si5Ox/SiO2 interface and interfacial reaction was suppressed afterthe NH3 annealing treatment.
Zhenjie Tang,Dongqiu Zhao,Rong Li,Xinhua Zhu 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effectsof post annealing atmosphere (NH3 and N2) on their memory storage characteristics were investigated. It was foundthat the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealingtreatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up toten years, even at 150℃, and excellent endurance (1.5% memory window degradation). The results are attributed todeep level bulk charge traps, induced by using NH3 annealing.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.
Zhenjie Tang,Jing Zhang,Yunhong Jiang,Guixia Wang,Rong Li,Xinhua Zhu 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
Tang, Zhenjie,Zhao, Dongqiu,Li, Rong,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.