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Xichang Wang,Haoyu Wang,Li Yan,Lihui Yang,Yuanming Xue,Jing Yang,Yongli Yao,Xulei Tang,Nanwei Tong,Guixia Wang,Jinan Zhang,Youmin Wang,Jianming Ba,Bing Chen,Jianling Du,Lanjie He,Xiaoyang Lai,Yanbo Li 대한내분비학회 2021 Endocrinology and metabolism Vol.36 No.4
Background: Subclinical hypothyroidism (SCH) is the most common thyroid dysfunction, and its relationship with blood pressure(BP) has been controversial. The aim of the study was to analyze the association between SCH and newly-diagnosed hypertension. Methods: Based on data from the Thyroid disease, Iodine nutrition and Diabetes Epidemiology (TIDE) study, 49,433 euthyroid individuals and 7,719 SCH patients aged ≥18 years were enrolled. Patients with a history of hypertension or thyroid disease were excluded. SCH was determined by manufacturer reference range. Overall hypertension and stage 1 and 2 hypertension were diagnosedaccording to the guidelines issued by the American College of Cardiology/American Heart Association in 2017. Results: The prevalence of overall hypertension (48.7%), including stage 1 (28.9%) and 2 (19.8%) hypertension, increased significantly in SCH patients compared with euthyroid subjects. With elevated serum thyroid stimulating hormone (TSH) level, the hypertension prevalence also increased significantly from the euthyroid to different SCH subgroups, which was more profound in femalesor subjects aged <65 years. The age- and sex-specific regression analysis further demonstrated the same trends in the general population and in the 1:1 propensity matched population. Similarly, several BP components (i.e., systolic, diastolic, and mean arterial BP)were positively associated with TSH elevation, and regression analysis also confirmed that all BP components were closely relatedwith SCH in female subjects aged <65 years. Conclusion: The prevalence of hypertension increases for patients with SCH. SCH tends to be associated with hypertension and BPcomponents in females younger than 65 years.
Analysis of Cracking Development and Mechanical Characteristics of High-Filled Cut-and-Cover Tunnel
Bin Zhuo,Feiyang Wang,Yong Fang,Yan Chen,Guixia Ning 대한토목학회 2020 KSCE JOURNAL OF CIVIL ENGINEERING Vol.24 No.8
The cut-and-cover tunnel (CCT) construction scheme has led to the popularity of high-filled cut-and-cover tunnel (HFCCT). HFCCT possesses a backfilling height of 30 − 50 m. However, such a high soil column produces a large force on the structure and the structure is prone to crack, causing structural damage and difficulty in normal use. In order to provide a reference for the structural safety assessment of HFCCT, we conducted a similarity model test to study the variation law of the development of crack, displacement, and internal force of HFCCT with a coefficient of λ (the ratio of the backfilling height to the height of the cut-and-cover tunnel). In the test, a 1:20 similar scale CCT model with slope angle 70° and groove width ratio 1 was built using data from the HFCCT on the Lanyu Line. The backfilling process on site was simulated in a simulation box (360 cm long, 120 cm wide and 209 cm high). A numerical model was also built using PFC2D to verify the accuracy of the model test and further explain the crack formation mechanism of the HFCCT from a microscopic perspective. The results show that with the increase of the coefficient of λ, the bearing stage of the CCT can be roughly divided into three stages: steady growth stage, rapid growth stage, and accelerated growth stage. Furthermore, the development of cracks is closely related to the displacement and internal force of the CCT. The larger the displacement of the CCT, the greater the instability of the structure and the larger the ratio of the bending moment to the internal force, which causes the crack to develop faster.
Jing Yao,Xinlu Wang,Xinru Zhao,Jinxian Wang,Hongbo Zhang,Wensheng Yu,Guixia Liu,Xiangting Dong 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.6
The Li2MnO3-modified Li1.2NixCo0.1Mn0.9-xO2 (x = 0.2, 0.45, 0.7)as cathode materials for lithium-ion batteries have beensuccessfully synthesized by a simple electrospinning process. Thestructure, morphology and electrochemical performances of theresulting products are studied systematically. The as-preparedLi2MnO3-modified Li1.2NixCo0.1Mn0.9-xO2 (x = 0.2, 0.45, 0.7) with adiameter of 200-300 nm has an initial discharge capacity of168.740 mAh·g−1, coulombic efficiency of 99.6% and a reversiblecapacity as high as 139.016 mAh·g−1 after 200 cycles at a currentrate of 0.2 C. The excellent electrochemical performances ofwhich are attributed to the stabilization of Li2MnO3 structure, therole of Li2MnO3 is contribute extra lithium to the reversiblecapacity and to facilitate Li+ transport through the structure.
Tang, Zhenjie,Zhang, Jing,Jiang, Yunhong,Wang, Guixia,Li, Rong,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO<sub>2</sub>)<sub>0.1</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.9</sub> or a (ZrO<sub>2</sub>)<sub>0.92</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub> trapping layer, the memory device using the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film is a promising candidate for future nonvolatile memory device applications.
Zhenjie Tang,Jing Zhang,Yunhong Jiang,Guixia Wang,Rong Li,Xinhua Zhu 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.