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Zaher Ramadan,Ik-Tae Im 한국탄소학회 2018 Carbon Letters Vol.25 No.-
In this study, a thermal-gradient chemical vapor infiltration (TG-CVI) process was numerically studied in order to enhance the deposition uniformity within the preform. The computational fluid dynamics technique was used to solve the governing equations for heat transfer and gas flow during the TG-CVI process for two- and three-dimensional (2-D and 3-D) models. The temperature profiles in the 2-D and 3-D models showed good agreement with each other and with the experimental results. The densification process was investigated in a 2-D axisymmetric model. Computation results showed the distribution of the SiC deposition rate within the preform. The results also showed that using two-zone heater gave better deposition uniformity.
Study on the coupled effects of process parameters on silicon growth using chemical vapor deposition
Zaher Ramadan,고동국,임익태 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.3
Response surface methodology (RSM) is used to investigate the complex coupling effects of different operating parameters on silicon growth rate in planetary CVD reactor. Based on the computational fluid dynamics (CFD) model, an accurate RSM model is obtained to predict the growth rate with different parameters, including temperature, pressure, rotation speed of the wafer, and the mole fraction of dichlorosilane (DCS). Analysis of variance is used to estimate the contributions of process parameters and their interactions. Among the four operating parameters that have been studied, the influences of susceptor temperature and the operating pressure were the most significant factors that affect silicon growth rate, followed by the mole fraction of DCS. The influence of wafer rotation is the least. The validation tests show that the results of silicon deposition rate obtained from the regression model are in good agreement with those from CFD model and the maximum deviations is 2.15%.
Zaher Ramadan,Ki Yeon Park(박기연),Nhan Nguyen,Chan Woo Park(박찬우) 대한기계학회 2021 대한기계학회 춘추학술대회 Vol.2021 No.11
In the present work, the heat transfer characteristics of the two-phase flow of refrigerant R134a in chevron-type plate heat exchangers have been numerically investigated. Due to the complexity of the two-phase evaporation process, a simplified 3D geometry of the PHE channel is considered in the present work. The volume of fluid method has been employed in the FLUENT code to solve two-phase flows. Lee model is employed to simulate the phase change. The validation was performed by comparing the predicted heat transfer coefficient against the experimental data. The effect of saturation temperature of the refrigerant, heat flux, and the spacing between the plates on heat transfer coefficient have been studied.
Study on the Coupled Effects of Process Parameters on Silicon Growth Using Chemical Vapor Deposition
Ramadan, Zaher,Ko, Dong Kuk,Im, Ik-Tae The Korean Society Of SemiconductorDisplay Technol 2019 반도체디스플레이기술학회지 Vol.18 No.3
Response surface methodology (RSM) is used to investigate the complex coupling effects of different operating parameters on silicon growth rate in planetary CVD reactor. Based on the computational fluid dynamics (CFD) model, an accurate RSM model is obtained to predict the growth rate with different parameters, including temperature, pressure, rotation speed of the wafer, and the mole fraction of dichlorosilane (DCS). Analysis of variance is used to estimate the contributions of process parameters and their interactions. Among the four operating parameters that have been studied, the influences of susceptor temperature and the operating pressure were the most significant factors that affect silicon growth rate, followed by the mole fraction of DCS. The influence of wafer rotation is the least. The validation tests show that the results of silicon deposition rate obtained from the regression model are in good agreement with those from CFD model and the maximum deviations is 2.15%.