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New Approach of Monte Carlo Simulation for Low Energy Electron Beam Lithography
Kim,Soo Hwan,Ham,Young Mog,Lee,Won Gyu,Chun,Kuk Jin 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
The Monte Carlo simulator for low energy electron beam lithography was developed and compared with the conventional simulator. We study the deposited energy profile to analyze the distribution of the energy deposited by secondary electrons and compare the total deposited energy distributions for low energy e-beam lithography. For more accurate simulation, we used Mott cross section instead of Rutherford equation for elastic scattering and also adopted modified Moller and Vriens cross section instead of Moller equation for inelastic scattering. For energy loss, Modified Bethe equation is used. The conventional model is not applicable to low energy simulation below 3keV due to the discontinuity of energy distribution by secondary electrons and to the discard of the secondary electrons by cutoff energy to prevent overestimation of secondary electron generation. It is verified that lateral diffusion of electron energy increased owing to inelastic scattering.
Kim,Dong Hyoun,Ham,Young Mog,Lee,Yong Jae,Chun,Kuk Jin 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
We have performed MLR (Multi Layer Resist) process to overcome proximity effect and charging effect that are obstacle in making fine patterns with high resolution. MLR process composed of layer deposition, e-beam expose, and successive etching process. Each unit process has been corrected and optimized. Especially, we focused on optimization of dry develop process. Because the undercut generated in bottom layer etching is the fatal factor in making very narrow pattern, correct dry develop condition setting is needed. Therefore, The experiments have been performed with the variation of process conditions and we obtained optimum condition. The single layer resist process and MLR process were compared in simulation to see the reduction of proximity effect the PBD(post bake delay)effects are investigated and analyzed qualitatively to improve resolution. Finally, 150nm line&space pattern and 100nm isolated line were made successfully and with very vertical profile.