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Seo, Jihoon,Moon, Jinok,Kim, Yehwan,Kim, Kijung,Lee, Kangchun,Cho, Yoonsung,Lee, Dong-Hee,Paik, Ungyu The Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.1
<P>We have investigated the synergistic effect with mixing of three different-sized SiO2 abrasives (30 nm-SiO2, 70 nm-SiO2 and 200 nm-SiO2) and the correspondingWchemical mechanical planarization (CMP) performances. Wremoval rate significantly increased when the different-sized SiO2 abrasives were mixed, which is attributed to the increase in the total contact area between the abrasives and the W film. Based on the statistical model, we obtained the optimal mixing ratio (30 nm, 70 nm, 200 nm) = (0.49, 0.23, 0.28) for the highest W removal rate. These results, investigated in this study, show that the removal rate of W film can be improved via simple mixing process. (C) 2016 The Electrochemical Society. All rights reserved.</P>
Seho Sun,Kangchun Lee,Ganggyu Lee,Yehwan Kim,Sungmin Kim,Junha Hwang,Hyungoo Kong,Kyung Yoon Chung,Ghulam Ali,Taeseup Song,Ungyu Paik 한국공업화학회 2022 Journal of Industrial and Engineering Chemistry Vol.111 No.-
Chemical mechanical planarization (CMP) is indispensable for processing of integrated circuit semiconductordevices to attain globally planarized surfaces. One of the critical consumables in the CMP processis a slurry containing abrasives like colloidal silica (SiO2). However, there is a limit to the use of CMP slurriescontaining SiO2 under acidic conditions due to deterioration of colloidal stability, resulting in defectson the planarized surfaces. Herein, we developed an Fe-substituted SiO2 consisting of single-atom Fe(III),enabling improved colloidal stability over universal pH regions for low-defect tungsten CMP applications. The facile and unique single-atom modification process is proposed by controlling the lattice dissolution–reprecipitation replacement of Fe3+ and Si4+ ions. The physicochemical states of Fe atoms in the surficiallattice of Fe-substituted SiO2 were confirmed through Raman spectroscopy, electron microscopy, x-rayabsorption spectroscopy, and energy-dispersive x-ray spectroscopy. Consequently, enhanced performancein W CMP was achieved using Fe-substituted SiO2. Regarding defect performance, defects werereduced from 11 scratches to 0 and 94 other defects to only 7. Additionally, the removal rate increasedfrom 67 to 122 Å/min, and the surface topography improved from 6.6 to 2.9 nm.