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Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method
주병윤,양성채,한병성,Kiyoshi Yatsui,Jung-Hui Lee 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using IBE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.
Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method
Cho, Byung-Yoon,Yang, Sung- Chae,Han, Byoung-Sung,Lee, Jung-Hui,Yatsui Kiyoshi The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.