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General SPICE Modeling Procedure for Double-Gate Tunnel Field-Effect Transistors
Najam, Syed Faraz,Tan, Michael Loong Peng,Yu, Yun Seop The Korea Institute of Information and Commucation 2016 Journal of information and communication convergen Vol.14 No.2
Currently there is a lack of literature on SPICE-level models of double-gate (DG) tunnel field-effect transistors (TFETs). A DG TFET compact model is presented in this work that is used to develop a SPICE model for DG TFETs implemented with Verilog-A language. The compact modeling approach presented in this work integrates several issues in previously published compact models including ambiguity about the use of tunneling parameters A<sub>k</sub> and B<sub>k</sub>, and the use of a universal equation for calculating the surface potential of DG TFETs in all regimes of operation to deliver a general SPICE modeling procedure for DG TFETs. The SPICE model of DG TFET captures the drain current-gate voltage (I<sub>ds</sub>-V<sub>gs</sub>) characteristics of DG TFET reasonably well and offers a definite computational advantage over TCAD. The general SPICE modeling procedure presented here could be used to develop SPICE models for any combination of structural parameters of DG TFETs.
The effect of trapped charge on silicon nanowire pseudo-MOSFETs.
Nam, Incheol,Kim, Minsuk,Najam, Syed Faraz,Lee, Eunhong,Hwang, Sungwoo,Kim, Sangsig American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Qot = -5.0 x 10(11) cm(-2) and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 x 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.</P>