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RISS 인기검색어
- 검색키워드
- 저자 : Siva Parvathi Padi (검색결과 3 건)
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A Brief Review on Recent Developments in MAPbI3 Perovskite-Based Transistors
Siva Parvathi Padi,김태용,라벨로 마테우스,이준신 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.5
Field-effect transistors (FETs) are the key elements of conventional electronics; hence, have drawn a lot of research and commercial interests. In recent years, metal halide perovskite materials have achieved a remarkable efficiency of 29.15% in the field of photovoltaics, and have drawn the scientific community’s attention to promote their use in the field of optoelectronics, such as FETs and phototransistors. The MAPbI3 (methylammonium lead iodide) perovskite TFT has achieved a record hole mobility of 21.41 cm2/V-s in the year 2020. In this review, we will briefly discuss the physical structure of MAPbI3 perovskite and the essential factors that stimulate these devices, together with the role of defects, the ion migration concept, and the implication of both dielectric and electrode materials on the device’s performance.
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A Brief Review on Variables and Test Priorities of Photovoltaic Module Life Expectancy
Siva Parvathi Padi,Sanchari Chowdhury,Muhammad Aleem Zahid,Jaeun Kim,Eun-Chel Cho,Junsin Yi 한국태양광발전학회 2021 Current Photovoltaic Research Vol.9 No.2
To endorse the reliability and durability of the solar photovoltaic (PV) device several tests were conducted before exposing to the outdoor field in a non-ideal condition. The PV module has high probability that intend to perform adequately for 30 years under operating conditions. To evaluate the long term performance of the PV module in diversified terrestrial conditions, one should use the outdoor performance data. However, no one wants to wait for 25 years to determine the module reliability. The accelerating stress tests performing in the laboratory by mimicking different field conditions are thus important to understand the performance of a PV module. In this review, we will discuss briefly about different accelerating stress types, levels and prioritization that are used to evaluate the PV module reliability and durability before using them in real field.
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Siva Parvathi Padi,Muhammad Quddamah Khokhar,Sanchari Chowdhury,조은철,이준신 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
The main goal of solar cell technology is to attain high efficiency, long durability, mass-production, cost-effectiveness, and made with eco-friendly materials. Among the various crystalline silicon solar cell technologies, Tunneling Oxide Passivated Contact (TOPCon) solar cell has its unique style in terms of the structure and carrier transport manner, which predominately decreases the metal contact recombination and gives 1-D carrier transport. A very high efficiency of 26% for TOPCon solar cells has been achieved with the industrial screen print technology and obtained high cell parameter values of V oc and fill factor as 732.3 mV and 84.3% respectively. The tunnel oxide thickness (maintaining < 2 nm) in the TOPCon has its prior impact on the efficiency and electrical parameters of the cell. To obtain the preferable thickness of the tunnel oxide layer various deposition techniques have been reported in the literature. SiOx is the most widely used tunnel oxide material for TOPCon solar cells to date. In this review, different deposition methods that were used for the SiOx tunnel oxide layer such as chemical oxidation, ozone oxidation, thermal oxidation, and plasma-enhanced chemical vapor deposition (PECVD) are elaborated. Moreover, the effect of the deposition conditions on the cell parameters in different techniques are also discussed briefly. Furthermore, the development of TOPCon solar cells and the latest reports that were used diff erent tunnel oxide materials in finding an alternative to SiOx tunnel oxide is discussed.
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