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Corrosion, LID and LeTID in Silicon PV Modules and Solution Methods to Improve Reliability
라벨로 마테우스,박형식,김영국,조은철,이준신 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
In this paper, some degradation and failure modes of PV modules are discussed. PV module reliability became a topic of extreme importance since manufacturers generally establish tight warranty periods with customers, despite having degradation rates around 0.6–0.7% a year. Special attention is given to corrosion, light-induced degradation (LID), and light and elevated induced degradation (LeTID) due to its frequency and contribution to the overall degradation rate. An overview of the corrosion mechanisms in metal contacts and their interaction with encapsulant and backsheet deterioration are presented. A systematic description of the types of corrosion by-products and their respective expected colors when observed through an optical microscope is presented. The most common techniques to evaluate corrosion are highlighted, as well as some observations and conclusions based on the results from previous studies. As for LID and LeTID, the main variants of concern to the photovoltaic industry are identified along with the mechanisms responsible for the generation of recombination active defects. At last, prevention and correction measures are described in order to minimize economic losses.
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Xinyi Fan,라벨로 마테우스,Yifan Hu,Muhammad Quddamah Khokhar,김영국,이준신 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm2 and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer.
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송전선로용 고전압 절연체의 최적 형상에 대한 유한요소 해석
김태용,산얄 심피,라벨로 마테우스,이준신 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.1
The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today’s design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D’s design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C’s design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.
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a-SiOx:H/c-Si 구조를 통한 향상된 밴드 오프셋과 터널링에 대한 전기적 특성 고찰
김홍래,팜뒤풍,오동현,박소민,라벨로 마테우스,김영국,이준신 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.4
a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT)solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiOx:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (Dit), and band offset. A thick oxygenrich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The Dit increased up to an oxygen rate on the order of 8%. Beyond 8%, the Dit was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.
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A Brief Review on Recent Developments in MAPbI3 Perovskite-Based Transistors
Siva Parvathi Padi,김태용,라벨로 마테우스,이준신 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.5
Field-effect transistors (FETs) are the key elements of conventional electronics; hence, have drawn a lot of research and commercial interests. In recent years, metal halide perovskite materials have achieved a remarkable efficiency of 29.15% in the field of photovoltaics, and have drawn the scientific community’s attention to promote their use in the field of optoelectronics, such as FETs and phototransistors. The MAPbI3 (methylammonium lead iodide) perovskite TFT has achieved a record hole mobility of 21.41 cm2/V-s in the year 2020. In this review, we will briefly discuss the physical structure of MAPbI3 perovskite and the essential factors that stimulate these devices, together with the role of defects, the ion migration concept, and the implication of both dielectric and electrode materials on the device’s performance.
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