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Chemical Vapor Deposition of Aluminum for ULSI Applications
Rhee, Shi Woo 한국화학공학회 1995 NICE Vol.13 No.2
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alone compounds, and reaction. mechanisms of these precursors in Al CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. in addition to thermal reactions, plasma and photochemical reactions are also briefly described.
CHEMICAL VAPOR DEPOSITION OF ALUMINUM FOR ULSI APPLICATIONS
Rhee, Shi Woo 한국화학공학회 1995 Korean Journal of Chemical Engineering Vol.12 No.1
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for A1 has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in A1 CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical reactions are also briefly described.
Synchrotron Radiation Induced Photochemical Reactions for Semiconductor Processes
Rhee, Shi-Woo The Korean Vacuum Society 1994 Applied Science and Convergence Technology Vol.3 No.2
Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.
Metal–semiconductor contact in organic thin film transistors
Rhee, Shi-Woo,Yun, Dong-Jin Royal Society of Chemistry 2008 Journal of materials chemistry Vol.18 No.45
<P>Optimization of the interface between the source/drain electrode and the organic semiconductor is one of the important factors for organic thin film transistor (OTFT) performance along with the insulator–semiconductor interface. In this Feature Article, items needed for the optimization of the metal–semiconductor interface and methods to measure interface properties are reviewed. Various electrode materials are compared in terms of the work function, contact resistance and the pentacene OTFT performance. The effect of surface modification is also discussed. Experimental data obtained in LAMP is introduced to show the effect of the various material properties more clearly.</P> <P>Graphic Abstract</P><P>The interface between the source/drain electrode and the organic semiconductor is important along with the insulator–semiconductor interface. In this Feature Article, the electrode material–pentacene interface is discussed. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b805884a'> </P>
Synchrotron Radiation Induced Photochemical Reactions for Semiconductor Processes
Shi-Woo Rhee 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.2
Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes, i,e., deposition, etching, and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be evaporated by SR irradiation, which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.
솔 - 젤법에 의한 석영유리의 제조 : 2 . 초임계 건조 및 소결 2 . Supercritical Drying and Sintering
이시우,임재곤,고영표,이건홍 한국화학공학회 1993 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.31 No.1
2단계 sonogel공정에 의하여 제조된 젤을 초임계 건조하여 에어로젤을 만들고 이것을 소결하여 석영유리를 제조하였으며, 젤의 미세구조와 공정변수들 간의 상호관계들을 조사하였다. 초임계 건조의 용매로는 에탄올을 사용하였으며, 조업조건은 300℃, 1500 psi로 고정하였다. 소결은 150℃, 300℃, 400℃, 600℃, 900℃ 및 1100℃ 에서 등온을 유지하며 진행하였으며, 분위기 가스로는 질소(<300℃), 산소(300℃-600℃) 및 헬륨(>600℃)를 사용하였다. 초임계 건조에는 약 8시간, 소결에는 약 17시간이 소요되었다. 에탄올을 사용한 초임계 건조는 젤의 표면을 소수성으로 만들어 물의 흡착을 최소화함으로 소결에 유리하였다 너무 높은 초임계 건조온도는 입자의 수축을 가져와 오히려 소결에 불리하므로, 최적 초임계 건조온도가 존재하였다. 소결시 발생하는 부풀음을 방지하기 위해서는 150℃에서 수분을 충분히 제거해 주어야 하였다. 소결시 젤의 부피 변화는 1070℃까지는 완만하였으며,. 1100℃에서 급격히 기공이 닫히며 소결이 완결되었다. 초임계 건조가 불완전하거나, 낮은 pH에서 제조된 젤은 소결에 의하여 결정이 생기는 것을 관찰하였다. 초임계 건조를 채택한 경우에는 wet젤의 구조가 소결의 조건에 큰 영향을 주었다. Aerogels were manufactured by supercritical drying of the wet gel which was made using 2-step sonogel process and silica glass was obtained by sintering of these aerogels. Effect of the microstructure of aerogels on process variables was investigated. Ethanol was chosen as a supercritical drying solvent, and the operating condition was set to 300℃ and 1500 psi. Sintering was performed with isothermal stages at 150℃, 300℃, 400℃, 600℃, 900℃ and 1100℃, and gaseous atmosphere was changed from nitrogen(<300℃) to oxygen(300-600℃) and helium(>600℃). It took about 8 hours in supercritical drying, and 17 hours in sintering. Supercritical drying with ethanol made the surface of aerogels hydrophobic, resulting in minimum adsorption of water on the surface. Since reduction of particles occurred due to high temperature during supercritical drying, optimum supercritical drying temperature must exist. Long isothermal stage at 150℃ eliminated bloating of sintered sample. The volume of aerogels reduced slowly up to 1070℃, but the pores were closed suddenly at 1100℃. Incomplete supercritical drying and low gelation pH produced crystals in sintering. The structure of wet gel had strong effect on the sintering conditions.