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K. Venkata Saravanan,K. Sudheendran,K. C. James Raju 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.6
We report the fabrication and characterization of Ba0.5Sr0.5TiO3 (BST5) thin films on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering. The x-ray diffraction (XRD) studies revealed that the BST5 films are highly oriented along (111) direction. The misfit strain in the films was about −0.68%, which is compressive in nature. The Root Mean Square roughness (RMS roughness) measured using dynamic force microscope (DFM)was about 2.4 nm. The low frequency (40 Hz - 1MHz) dielectric properties measured using a Metal-Insulator-Metal structure show no dispersion either in dielectric constant or tan δ. The dielectric constant, loss tangent,tunability and figure of merit measured at 1MHz were about 598, 0.008, 54% (at 200 kV/cm) and 66, respectively. Varactors of circular patch capacitor (CPC) structure were patterned on the BST5 layer using UV photolithography and metal lift off process. The microwave dielectric response of the parallel plate varactors,measured from 1.5 - 10 GHz showed a tunability of ~30% (at 12 V dc bias) and a quality factor of 23.5(at 0 V dc bias).
Thirmal C.,Mohan P. Nikhil,Suresh G.,Raju K.C. James,Vishwam T. 한국물리학회 2022 Current Applied Physics Vol.44 No.-
The free-standing poly (vinylidene fluoride-trifluoroethylene) [P(VDF-TrFe)] and P(VDF-TrFe)-Nafion blended films were fabricated using the casting method. The XRD and FTIR confirmed the electro-active β-phase of P (VDF-TrFe). The morphological changes were studied through SEM analysis of the blends. The dielectric and ac conductivity measurements were carried out as a function of temperature from 30 ◦C to 130 ◦C in the frequency range of 100 Hz - 1 MHz. The dielectric constant reveled a ferroelectric to paraelectric transition in all the samples with a decrease in the transition temperature of the blends. The temperature-dependent ac conductivity and power law analysis demonstrated the presence of a correlated barrier hoping mechanism with a change in the motional behavior in the blends. The blended films exhibited low dielectric loss and more stable dielecric properties with temperature in comparison to P(VDF-TrFe). These films demonstrated the potential to be used in high-temperature flexible capacitor applications.