http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Arka Dey,Mrinmay Das,Joydeep Datta,Rajkumar Jana,Joydeep Dhar,Sayantan Sil,Debasish Biswas,Chandan Banerjee,Partha Pratim Ray 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
Here we have presented the results of large area (30 × 30 cm2) siliconhydrogenalloy material and solar cell by argon dilution method. As analternative to hydrogen dilution, argon dilution method has been appliedto develop single junction solar cell with appreciable stability. Optimization of deposition conditions revealed that 95% argon dilutiongives a nanostructured material with improved transport property andless light induced degradation. The minority carrier diffusion length (Ld)and mobility-lifetime (μτ) product of the material with 95% argondilution degrades least after light soaking. Also the density of states(DOS) below conduction level reveals that this material is lessdefective. Solar cell with this argon diluted material has been fabricatedwith all the layers deposited by argon dilution method. Finally we havecompared the argon diluted solar cell results with the optimizedhydrogen diluted solar cell. Light soaking study proves that it is possibleto develop stable solar cell on large area by argon dilution method andthat the degradation of argon diluted solar cell is less than that ofhydrogen diluted one.