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RISS 인기검색어
- 검색키워드
- 저자 : R. J. Blaikie (검색결과 3 건)
- 무료
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A comparison of near-field lithography and planar lens lithography
D.O.S. Melville,R.J. Blaikie,M.M. Alkaisi 한국물리학회 2006 Current Applied Physics Vol.6 No.3
The resolution of a near-field lithography technique that uses a planar silver lens to form a near-field image has been investigated and compared with hard-contact lithography. Sub-diffraction-limited imaging has been observed through a 50 nm silver film, confirming a recent superlensing proposal [J.B. Pendry, Phys. Rev. Lett. 85 (2000) 3966], with grating periods down to 170 nm pitch being patterned into resist using simple broadband UV-illumination.
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Development of Si/SiO2 super-lattices deposited by RF reactive sputtering
E. Boyd,R.J. Blaikie 한국물리학회 2006 Current Applied Physics Vol.6 No.3
munications band. The development of a process for the deposition of siliconsilicon dioxide super-lattices using RF reactive sputteringis described. The use of reactive sputtering of silicon dioxide from a silicon target enables a much higher deposition rate than could beachieved using a SiO2 target. The characteristics of these lms are shown to closely match the widely accepted values for silicon dioxideover a wide range of wavelengths. The cross-sectional SEM micrograph of a super-lattice deposited in this manner is presented which shows clearly the alternating layers with well-defined interfaces.
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Analysis of silicon terahertz diffractive optics
E. D. Walsby,S. M. Durbin,D. R. S. Cumming,R. J. Blaikie 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
Simulations of silicon diractive lenses for terahertz frequencies have been performed using a Fraunhofer wave propagationmodel to show how the lens eciency can be aected by dierent fabrication defects. A general model is presented to illustrate theoperating bounds which must be adhered to when fabricating a lens using a multiple level process. From these simulations it ispossible to ascertain for a specic lens design with known processing inaccuracies what level of design complexity will gain the mostbenet. It is shown that for a 1 THz lens fabricated using an eight level process the lens eciency is reduced by less than 20% forrealistic values of etch non-uniformity, inter-level misalignment and surface roughness.
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