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Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications
Umesh P. Gomes,Yiqiao Chen,Sanjib Kabi,Peter Chow,Dhrubes Biswas 한국물리학회 2013 Current Applied Physics Vol.13 No.3
The performance of InAlAs/InGaAs quantum well field effect transistors are subject to high impact ionization and band-to-band tunneling (BTBT) due to its narrow bandgap feature. In this work, the energy gap is engineered using strain and quantization techniques to increase the effective energy gap leading to low impact ionization and BTBT leakage current. It is shown that the impact ionization is reduced in 5 nm channel device as compared to 13 nm device with onset at approximately Egeff/q. Also the band-to-band-tunneling current is reduced due to the increase in effective energy gap. We have also investigated the effects of quantum well engineering on the dc performance of InGaAs HEMTs.
Palash Das,Sanjay Kumar Jana,Nripendra N. Halder,S. Mallik,S. S. Mahato,A. K. Panda,Peter P. Chow,Dhrubes Biswas 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diff raction symmetricand asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of MolecularBeam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride(GaN) heterostructures. Mathews–Blakeslee critical thickness model has been applied in an alternative way to determinethe partially relaxed AlGaN epilayer thicknesses. The coupling coeffi cient determination has been presented in a diff erentperspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is furtherincreased to determine mosaic tilt ranging between 0.01° and 0.1°.