Heterogeneous Catalysis of Iso-Octane over Cation Exchanged Mordenite Surfaces

Chong, Paul-Joe Korean Chemical Society 1984 Bulletin of the Korean Chemical Society Vol.5 No.2

This study concerns about catalyic cracking of iso-octane over cation ($Cd^{2+},\;Ca^{2+}\;and\;La^{3+}$) exchange mordenites. It deals with mordenite shape selectivity and with kinetics of this catalytic reaction. The striking feature was that over the region of cracking temperature investigated, 523-665K, the yield of isobutene was predominant, relative to that of larger or smaller carbon chain(s). This permits kinetic analysis of the heterogeneous catalytic system in terms of the modified pulse-version microcatalytic chromatography. The observed activation energy ($E_a,\;KJ\;mol^{-1}$) was found to be 46 for Cd-M, 57 for Ca-M and 59 for La-M, respectively.

(1210) Gallium Nitride 단결정 박막의 결정구조 및 광학적 특성

황진수,정필조,Hwang Jin Soo,Chong Paul Joe 한국결정학회 1997 韓國結晶學會誌 Vol.8 No.1

The optical properties of (1210) GaN epitaxy films grown on the (1012) $\alpha-A1_2O_3$ substrates have been studied. The hetero-epitaxy films were grown by the halide vapor phase epitaxy (HVPE) method using $Ga/HC1/NH_3/He$ system at $990^{\circ}C$. XRD, RHEED and SEM are used for the identification of the hetero-epitaxy films structure and surface morphology. The confirmed (1210) GaN epitaxy films were characterized by PL and Raman. By the Raman scattering, the active phonon modes of single-phase GaN films are varied with the arrangement of both polarization and propagation directions of laser beam with reference to the axis in single-phase crystal films. The Y(Z, Y & Z) X geometry allows scattering pat-terns of $A_1(TO)=533\;cm^{-1},\;E_1(TO)=559\;cm^{-1}\;and\;E_2=568 cm^{-1}$ modes, whereas in the Z(Y, Y & Z) X geometry the only $E_2$ mode are observed. (1012)면 사파이어 기판위에서 성장되는 (12f10)면 GaN 이종적층막의 광학적 특성을 연구하였다. GaN 이종적층막은 $Ga/HC1/NH_3/He$계를 사용한 HVPE(halide vapor phase epitaxy)방법에 의하여 $990^{\circ}C$의 온도에서 성장시켰다. 이종적층막의 표면조직과 결정구조는 XRD, RHEED와 SEM으로 확인하였다. 결정구조가 확인된 (1210)면 GaN 단결정막의 광학적 특성은 PL과 Ra-man으로 관찰하였다. Raman 측정은 광학적포논에 기인된 활성모드를 결정축에 대하여 레이저빔의 편광과 진행방향에 의해 변화하는 것을 관찰하였다. Y(Z, Y & Z) X 방향에서의 측정은 $A_1(TO)=533\;cm^{-1},\;E_1(TO)=559\;cm^{-1}$과 $E_2=568\;cm^{-1}$ 모드에 기인된 Raman 스펙트럼을 관찰할 수 있었으며 Z(Y, Y & Z) X 방향에서의 측정은 $E_2$포논 만이 검출되었다.

Single-phase Gallium Nitride on Sapphire with buffering AlN layer by Laser-induced CVD

Hwang Jin-Soo,Lee Sun-Sook,Chong Paul-Joe Korean Chemical Society 1994 Bulletin of the Korean Chemical Society Vol.15 No.1

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

NO의 선택적 촉매 환원반응에 대한 Co/ZSM-5의 소성조건에 따른 안정성에 관한 연구

박석준,이철위,정필조,Park, Seok Joon,Lee, Chul Wee,Chong, Paul Joe 대한화학회 1997 대한화학회지 Vol.41 No.6

Reduction of the defect density in GaN films

Jin Soo Hwang,Satoru Tanaka,Sohachi Iwai,Yoshinobu Aoyagi,Paul Joe Chong 한국진공학회 1997 한국진공학회 학술발표회초록집 Vol.- No.-

HVPE법에 의한 Zn-Doped GaN 박막 제조

김향숙,황진수,정필조,Kim, Hyang Sook,Hwang, Jin Soo,Chong, Paul Joe 대한화학회 1996 대한화학회지 Vol.40 No.3

GaN 단결정 박막은 halide vapor phase epitaxy(HVPE)방법을 사용하여 사파이어 기판위에 헤케로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전동성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43eV의 청색영역에서 발광 피크를 가졌다. 본 연구에의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다. For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

Application of Laser Induced Photoacoustic Spectroscopy in the Investigation of Interaction of Neodymium(III) with Water Soluble Synthetic Polymer

Tae Hyung Yoon,Hichung Moon,Seung Min Park,Joong Gill Choi,Paul Joe Chong Korean Chemical Society 1993 Bulletin of the Korean Chemical Society Vol.14 No.5

Laser-induced photoacoustic spectroscopy (LIPAS), which utilizes the photothermal effect that results from nonradiative relaxation of excited state molecules, was used in the speciation analysis of the complexes of neodymium(III) and water soluble synthetic polyelectrolyte, poly methacrylic acid (PMAA), in 0.1 M $NaClO_4$ at pH of 6.0. The minimum detection limit of Nd(III) by LIPAS was $5.O{\times}10^{-6}$ M. Experiment was carried out at low concentration ratio of Nd(III) to PMAA to assure that 1 : 1 complexes predominate. The bound and free Nd(III) species were characterized by measuring nonradiative relaxation energy of the excited states $(^2GM{7/2}\;and\;^4G_{5/2})$ to the metastable state $(^4G_{3/2})$. Two species were quantified by deconvolution of the mixed spectrum using their respective reference spectra. The conditional stability constant measured by LIPAS was 5.52 L$mol^{-1}$.

Hetero-Epi막 성장용 사파이어 기판의 산에칭

김향숙,황진수,정필조,Kim, Hyang Sook,Hwang, Jin Soo,Chong, Paul Joe 대한화학회 1995 대한화학회지 Vol.39 No.1

단결정 적층막을 제조하기 위해 사용되는 사파이어 기판에 대하여 황산과 인산의 혼합용액 화학적 에칭을 조사하였다. 여러가지 배향면의 사파이어에 대한 에칭정도는 황산과 인산의 3:1 조성과 $315{\pm}2^{\circ}C$에서 에칭시간에 의존하였다. 280~320$^{\circ}C$ 범위에서 30분간씩 산에칭시킨 후에 에칭속도(R)를 구하였고, log R에 대한 $1/T$ semilog plot로부터 활성화에너지$(E_a)$를 구하였으며, 그것은 $({\bar1}012) > (10{\bar1}0) > (11{\bar2}0) > (0001)$면 순서로 감소하였다. 한편 (0001), $({\bar1}012),\;(10{\bar1}0)$과 $(11{\bar2}0)$면의 표층 두께를 각각 64.6, 46.5, 16.2와 5.1 ${\mu}m$ 에칭시킨 후의 기판 표면을 SEM으로 관찰하였다. The surface of a sapphire substrate used for hetero-epitaxy was chemically polished in a mixture of $H_3PO_4\;and\;H_2SO_4$ solution. The extent of etching for various crystal orientations was found to be dependent on the etching time at $315{\pm}2^{\circ}C$ and at the composition of $H_2SO_4 : H_3PO_4$=3 : 1. In addition, the etching rates of the substrates were investigated in the mixture of $H_2SO_4 : H_3PO_4$=3 : 1 by volume and in the temperature range of 280~320$^{\circ}C$. From the plot of log R against 1/T, the activation penergy ($(E_a)$) was found to be in the order of $({\bar1}012) > (10{\bar1}0) > (11{\bar2}0) > (0001)$ plane. After removing the surface layers of the sapphire with (0001), $({\bar1}012),\;(10{\bar1}0)\;and\;(11{\bar2}0)$ plane by a thickness of 64.6, 46.5, 16.2 and 5.1 ${\mu}m$, respectively, the morphology of the resulting surface was observed by SEM.

The Application of Time-Resolved Laser Induced Fluorescence Spectroscopy in the Complexation Studies of Eu(III) and Cm(III) with Humic Substances

Joong Gill Choi,Oum Ka Won,Chang Yeoul Choi,Hichung Moon,Hyun Sang Shin,Park, Seung Min,Paul Joe Chong Korean Chemical Society 1993 Bulletin of the Korean Chemical Society Vol.14 No.1

The application of time-resolved laser induced fluorescence spectroscopy (TRLIF) to the complexation studies of Eu(III) and Cm(III) with humic substances is described. Using this method, three different spectroscopic characteristics(excitation spectra, emission spectra, and lifetimes) of these aquo ions and their complexes can be directly measured. By observing shifts in the wavelength and changes in the lifetime and intensities of the fluorescence emission, the information on the complexation behavior of humic substances with these trivalent metal cations in an aqueous solution, as well as energy transfer mechanisms, can be obtained. In addition, this method allows precise spectroscopic quantification of the complexation processes at very low concentrations of both components.

Trimethylaluminum (TMA), $NH_3$ 및 TMA :$NH_3$Adduct의 열분해 반응에 대한 in-situ FTIR 분광학적 연구

김향숙,김성한,황진수,최중길,정필조,Hyang Sook Kim,Seong Han Kim,Jin Soo Hwang,Joong Gill Choi,Paul Joe Chong 대한화학회 1993 대한화학회지 Vol.37 No.12

TMA와 $NH_3$와의 기상 열분해 반응을 in-situ FTIR 분광법으로 관찰하였다. 사용한 spectroscopic reaction cell은 stainless-steel제로 자체 제작한 hexagonal-port chamber로서 2개의 NaCl window를 평행하게 설치하여 1100$^{\circ}C$까지 가열할 수 있으며 또한 이와 같은 높은 온도에서 분광분석이 가능하였다. TMA와 $NH_3$는 혼합 즉시 반응하여 TMA:$NH_3$adduct를 생성하였으며, 500$^{\circ}C$에서그 adduct가 완전분해됨을 FTIR로 확인하였다. TMA와 TMA:$NH_3$adduct의 열분해는 주생성물로$CH_4$을 방출하였다. 기상의 TMA,$NH_3$ 및 TMA:$NH_3$ adduct에 대하여 상온에서 관찰한 IR band들은 문헌값과 대조하여 assign하였다. TMA의 열분해에 대한 kinetic data로부터 이 반응이 1차식으로 일어남을 알 수 있었다. The thermal decomposition of trimethylaluminum (TMA) with ammonia has been investigated by in-situ Fourier transform infrared spectroscopy. The spectroscopic reaction cell, which permits heating interna lly up to 1100$^{\circ}C$, consists of stainless-steel hexagonal-port chamber containing two NaCl windows installed in parallel. In this work, the stoichiometric reaction between TMA and $NH_3$ is found to be completed immediately after mixing. FTIR spectra observed in the range of temperature 25∼1100$^{\circ}C$ show that TMA and TMA : $NH_3$ adduct decompose into methane as a predominant product around 500$^{\circ}C$. The assignments of the IR bands due to the gaseous TMA, $NH_3$ and TMA : $NH_3$ adduct are attempted on the basis of the published data. Furthermore, the decomposition of TMA can be described as a first-order reaction. Kinetic data about the decompositon of TMA and TMA : $NH_3$adduct will also be discussed.