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      • KCI등재

        Effects of UV Assistance on the Properties of Al-Doped ZnO Thin Films Deposited by Sol-Gel Method

        Yung-Kuan Tseng,Feng-Ming Pai,Yan-Cheng Chen,Chao-Hsien Wu 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.6

        We report here the preparation of aluminum doped zinc oxide transparent conductive thin films by a UV-assisted sol-gel method. It was found that UV irradiation creates ozone, which promotes the conductivity and transparency of the films. Boro-silicate glasses are used as substrates; an PGME is used as a solvent; after spin-coating,the films are dried and radiated with UV and then heated to 400°C for decarburization and 500°C for annealing under air. The surface morphologies of the prepared films are observed by FE-SEM and AFM. It was found that the films irradiated with UV-C are smoother and denser. An XRD analysis shows that the films have a typical wurtzite crystalline structure with a c-axis orientation normal to the surface. The electric resistance values measured with a four-point probe show that the films irradiated with UV have better conductivity (at approximately 3.4 × 10−3Ω-cm) than the films that did not undergo UV irradiation. An analysis by visible light spectrometry indicates that the AZO films irradiated with UV are more transparent than the films without UV-irradiation.

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        Facilitating epitaxial growth of ZnO films on patterned GaN layers: A solution-concentration-induced successive lateral growth mechanism

        Rong-Ming Ko,Yan-Ru Lin,Ching-Yi Chen,Pai-Feng Tseng,Shui-Jinn Wang 한국물리학회 2018 Current Applied Physics Vol.18 No.1

        The hydrothermal epitaxy of ZnO films on a patterned GaN layer with a honeycomb etching hole array is demonstrated. Through m-planes of the GaN layer exposed on the vertical walls of the etching holes, highly crystalline ZnO films via multiple lateral growth stages can be realized. It is found that higher concentrations of zinc nitrate hexahydrate (ZNH) and hexamethylenetetramine (HMT) in hydrothermal solution yield a larger number of ZnO molecules to speed up ZnO growth during the initial stage of hydrothermal growth, also create secondary crystals and initialize further lateral growth stages to bridge neighboring ZnO prisms after smooth surfaces formed on the m-plane of a ZnO prism. A successive lateral growth mechanism that strongly depends on ZNH and HMT concentrations in the hydrothermal solution is proposed and discussed.

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