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RISS 인기검색어
- 검색키워드
- 저자 : O. O. Kapitanova (검색결과 5 건)
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Kapitanova, Olesya O,Panin, Gennady N,Cho, Hak Dong,Baranov, Andrey N,Kang, Tae Won IOP 2017 Nanotechnology Vol.28 No.20
<P>Photocatalytic oxidation of graphene with ZnO nanoparticles was found to create self-assembled graphene oxide/graphene (G/GO) photosensitive heterostructures, which can be used as memristors. Oxygen groups released during photodecomposition of water molecules on the nanoparticles under ultraviolet light, oxidized graphene, locally forming the G/GO heterojunctions with ultra-high density. The G/GO nanostructures have non-linear current–voltage characteristics and switch the resistance in the dark and under white light, providing four resistive states at room temperature. Photocatalytic oxidation of graphene with ZnO nanoparticles is proposed as an effective method for creating two-dimensional memristors with a photoresistive switching for ultra-high capacity non-volatile memory.</P>
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Synthesis and Properties of Graphene Oxide/Graphene Nanostructures
O. O. Kapitanova,파닌,A. N. Baranov,강태원 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
We report preparation of graphene oxide (GO)/graphene (G) nanostructures and their structural, optical and electrical properties. GO was synthesized through oxidation of graphite by using the modified Hummer’s method, in which a long oxidation time was combined with a highly effective method for purifying the reaction products. The obtained GO was partially reduced (r-GO) by adding ascorbic acid and thermal annealing. An electrical reduction/oxidation process in r-GO under an electric field was used to form and control the GO/G nanostructures and the potential barrier at the interface. After the treatment, the ratio of the intensity of peak G (1578 cm−1) to that of peak D (1357 cm−1) in Raman spectra of the samples is increased, which is attributed to an increase in the ratio between the sp2 and sp3 regions. The electrical and the luminescence characteristics of the GO/G nanostructures were investigated.
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Resistive Switching in Graphene/Graphene Oxide/ZnO Heterostructures
O. O. Kapitanova,파닌,O. V. Kononenko,A. N. Baranov,강태원 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigatedusing optical and electrical characterizations. ZnO nanorods grown on graphene substrateby using the hydrothermal method were used for local oxidation of graphene and the formation ofself-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed bythermal reduction or the growth of graphene by using chemical vapor deposition. The verticalheterostructure demonstrated well-reproducible resistive switching for low offset voltage and couldbe used to fabricate high-density memory devices with low power consumption.
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Resistive switching in graphene/graphene oxide/ZnO heterostructures
Kapitanova, O. O.,Panin, G. N.,Kononenko, O. V.,Baranov, A. N.,Kang, T. W. 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated using optical and electrical characterizations. ZnO nanorods grown on graphene substrate by using the hydrothermal method were used for local oxidation of graphene and the formation of self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could be used to fabricate high-density memory devices with low power consumption.
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Phonon anharmonicities in supported graphene
Kolesov, Egor A.,Tivanov, Mikhail S.,Korolik, Olga V.,Kapitanova, Olesya O.,Cho, Hak Dong,Kang, Tae Won,Panin, Gennady N. Elsevier 2019 Carbon Vol.141 No.-
<P><B>Abstract</B></P> <P>The paper presents temperature-dependent Raman studies of anharmonic phonon properties of graphene as-grown on copper, transferred to copper, SiO<SUB>2</SUB>/Si, and Al<SUB>2</SUB>O<SUB>3</SUB>, as well as nitrogen-doped graphene on SiO<SUB>2</SUB>/Si. Different G and 2D peak position and linewidth temperature dependencies were obtained in the temperature range of 20–294 K, upon which anharmonic constants for 3- and 4-phonon processes were determined. Values of anharmonic constants obtained from G peak shift for undoped graphene on dielectric substrates were quantitatively close to both experimental results for unsupported graphene and theoretical predictions reported in the literature, while the values for graphene as-grown on copper were almost two orders of magnitude greater. The results were analyzed in terms of substrate effect on phonon properties of graphene. The present study is useful for taking into account anharmonic phonon effects in graphene when designing graphene-based nanoelectronic devices.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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