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열처리 시 S/Se 분말 비율에 따른 Cu₂ZnSnSe₄ (CZTSSe) 박막의 합성 및 특성 평가
강명길(Myeng Gil Gang),Ming Rui He,홍창우(Chang Woo Hong),김진혁(Jin Hyeok Kim) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
Cu₂ZnSn(SxSe1-x)₄ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfoselenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at 540°C in Ar atmosphere with pre-treatment at 300°C. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% (Voc : 348 mV, Jsc : 26.71 mA/cm², FF : 50%, and active area : 0.31 cm²). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.
Cho, Yunae,Jeong, Inyoung,Gang, Myeng Gil,Kim, Jin Hyeok,Song, Soomin,Eo, Young-Joo,Ahn, Seung Kyu,Shin, Dong Hyeop,Cho, Jun-Sik,Yun, Jae Ho,Gwak, Jihye,Kim, Kihwan Elsevier 2018 Solar energy materials and solar cells Vol.188 No.-
<P><B>Abstract</B></P> <P>The structural, optical, and electrical properties of molybdenum (Mo) layers play a major role in Cu(In,Ga)Se<SUB>2</SUB> (CIGS) solar cell performance. The Mo layer works as a transport gate for diffusion of alkali ion from the soda-lime glass substrate to the back contact in CIGS solar cells. In the present work, Mo back contacts are controlled to exhibit two different orientations: (110)-oriented and randomly oriented. The influence of these orientations on CIGS absorbers and resulting solar cells is investigated. <I>In situ</I> thermo-Raman spectroscopy and secondary ion mass spectrometry results indicate that the greater amount of alkali ions are found in the CIGS absorber with randomly oriented Mo back contact than in the (110)-orientated Mo back contact. The resulting different Na incorporations significantly affect the performance of the resulting devices. Devices with the randomly oriented Mo back contact exhibit superior device performances to the devices with (110)-oriented Mo back contact. With comprehensive device characterizations, an alkali ion release determined by the orientation of the Mo back contact affects the recombination mechanism in the CIGS bulk and the back contact properties at the CIGS/Mo interface.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The crystal orientation of Mo greatly affects alkali incorporation into CIGS films. </LI> <LI> Alkali incorporation by the orientation of Mo is dynamically observed via Thermo-Raman spectroscopy technique. </LI> <LI> Alkali incorporation influences not only the CIGS bulk but also CIGS/Mo interface. </LI> <LI> Correlation between device performance and alkali incorporation is discussed. </LI> </UL> </P>