http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Mordi, Mohd Nizam (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
-
Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone
Jandhyala, Srikar,Mordi, Greg,Lee, Bongki,Lee, Geunsik,Floresca, Carlo,Cha, Pil-Ryung,Ahn, Jinho,Wallace, Robert M.,Chabal, Yves J.,Kim, Moon J.,Colombo, Luigi,Cho, Kyeongjae,Kim, Jiyoung American Chemical Society 2012 ACS NANO Vol.6 No.3
<P>Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al<SUB>2</SUB>O<SUB>3</SUB>) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using <I>ab initio</I> calculations and experimentally using <I>in situ</I> monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al<SUB>2</SUB>O<SUB>3</SUB>. Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al<SUB>2</SUB>O<SUB>3</SUB> of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ∼19 000 cm<SUP>2</SUP>/(V·s) are also achieved <I>after</I> Al<SUB>2</SUB>O<SUB>3</SUB> deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-3/nn300167t/production/images/medium/nn-2012-00167t_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn300167t'>ACS Electronic Supporting Info</A></P>
-
Antioxidant value and Antiproliferative Efficacy of Mitragynine and a Silane Reduced Analogue
Goh, Teik Beng,Yian, Koh Rhun,Mordi, Mohd Nizam,Mansor, Sharif Mahsufi Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.14
Background: To investigate the antioxidant value and anticancer functions of mitragynine (MTG) and its silane-reduced analogues (SRM) in vitro. Materials and Methods: MTG and SRM was analyzed for their reducing power ability, ABTS radical inhibition and 1,1-diphenyl-2-picryl hydrazylfree radicals scavenging activities. Furthermore, the antiproliferation efficacy was evaluated using MTT assay on K 562 and HCT116 cancer cell lines versus NIH/3T3 and CCD18-Co normal cell lines respectively. Results: SRM and MTG demonstrate moderate antioxidant value with ABTS assay (Trolox equivalent antioxidant capacity (TEAC): $2.25{\pm}0.02$ mmol trolox / mmol and $1.96{\pm}0.04$ mmol trolox / mmol respectively) and DPPH ($IC_{50}=3.75{\pm}0.04mg/mL$ and $IC_{50}=2.28{\pm}0.02mg/mL$ respectively). Both MTG and SRM demonstrate equal potency ($IC_{50}=25.20{\pm}1.53$ and $IC_{50}=22.19{\pm}1.06$ respectively) towards K 562 cell lines, comparable to control, betulinic acid (BA) ($IC_{50}24.40{\pm}1.26$). Both compounds showed concentration-dependent cytototoxicity effects and exert profound antiproliferative efficacy at concentration > $100{\mu}M$ towards HCT 116 and K 562 cancer cell lines, comparable to those of BA and 5-FU (5-Fluorouracil). Furthermore, both MTG and SRM exhibit high selectivity towards HCT 116 cell lines with selective indexes of 3.14 and 2.93 respectively compared to 5-FU (SI=0.60). Conclusions: These findings revealed that the medicinal and nutitional values of mitragynine obtained from ketum leaves that growth in tropical forest of Southeast Asia and its analogues does not limited to analgesic properties but could be promising antioxidant and anticancer or chemopreventive compounds.
-
Lee, S.,Iyore, O.D.,Park, S.,Lee, Y.G.,Jandhyala, S.,Kang, C.G.,Mordi, G.,Kim, Y.,Quevedo-Lopez, M.,Gnade, B.E.,Wallace, R.M.,Lee, B.H.,Kim, J. Pergamon Press ; Elsevier Science Ltd 2014 Carbon Vol.68 No.-
The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ~12980 and hole mobility ~9214cm<SUP>2</SUP>/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
