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오늘 본 자료
Venugopal, Gunasekaran,Jung, Myung-Ho,Suemitsu, Maki,Kim, Sang-Jae Elsevier 2011 Carbon Vol.49 No.8
<P><B>Abstract</B></P><P>We report on the fabrication and transport characteristics of nanoscale stacked-junctions of thin graphite flake. The stacked-junctions were fabricated using a three-dimensional focused-ion-beam milling. By varying the effective in-plane area down to submicron scale, the stacked-junctions with in-plane area <I>A</I> (from 2 down to 0.25μm<SUP>2</SUP>) and stack height–length (from 300 to 100nm) along <I>c</I>-axis were fabricated. The nano-stack shows perfect <I>c</I>-axis transport characteristics in which we observed a semiconducting behavior for <I>T</I>>65K and metallic behavior for <I>T</I><65K. The obtained results were well fitted with the <I>c</I>-axis electrical conduction mechanism. The stack with in-plane area <I>A</I> of 0.25μm<SUP>2</SUP> showed nonlinear concave-like <I>I</I>–<I>V</I> characteristics even at 300K; however the stack with <I>A⩾</I>1μm<SUP>2</SUP> were shown an ohmic-like <I>I</I>–<I>V</I> characteristic at 300K for both low and high-current biasing. It turned into nonlinear characteristics when the temperature goes down. The observation of this anomalous transport characteristics were discussed in detail with stack capacitance calculations. The nonlinear characteristics observed at 300K for the stack with <I>A</I> of 0.25μm<SUP>2</SUP> were shown best fit with Fowler–Nordheim tunneling model.</P>
김태엽,박래만,In-Kyu You,최철종,Ansoon Kim,Maki Suemitsu 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.2
In this study, we investigated the growth mechanism of silicon quantum dots (Si QDs) embedded in a Si-nitride film formed by using plasma-enhanced chemical vapor deposition. Special attention was paid to the influence of the nitrogen source, especially in molecular nitrogen (N_2) and ammonia (NH_3). We found that the nitrogen source played a decisive role in determining the location of nucleation sites of Si QDs. In the case of the SiH_4+NH_3 gas source, the Si QDs mainly nucleated at the surface of the Si substrate, in contrast to the case of SiH_4+N_2 which should no such tendency. We believe that a specific surface reaction of the initially adsorbed NH_3 molecules forming lowdimensional structures (NH_2-Si-Si-H) on the Si substrate provide the nucleation sites for Si QDs when using a SiH_4+NH_3 plasma.
<i>In situ</i> -grown hexagonal silicon nanocrystals in silicon carbide-based films
Kim, Tae-Youb,Huh, Chul,Park, Nae-Man,Choi, Cheol-Jong,Suemitsu, Maki Springer 2012 NANOSCALE RESEARCH LETTERS Vol.7 No.1
<P>Silicon nanocrystals (Si-NCs) were grown <I>in situ</I> in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.</P>
Solution-processed Al<sub>2</sub>O<sub>3</sub>gate dielectrics for graphene field-effect transistors
Park, Goon-Ho,Kim, Kwan-Soo,Fukidome, Hirokazu,Suemitsu, Tetsuya,Otsuji, Taiichi,Cho, Won-Ju,Suemitsu, Maki Institute of Pure and Applied Physics 2016 Japanese Journal of Applied Physics Vol.55 No.9
<P>The performance of actual graphene FETs suffers significant degradation from that expected for pristine graphene, which can be partly attributed to the onset of defects and the doping of the graphene induced during the fabrication of gate dielectric layers. These effects are mainly due to high-temperature processes such as postdeposition annealing. Here, we propose a novel low-temperature method for the fabrication of gate dielectrics, which consists of the natural oxidation of an ultrathin Al layer and a sol-gel process with oxygen plasma treatment to form an Al2O3 layer. The method results in a significant reduction of defects and doping in graphene, and devices fabricated by this method show an intrinsic carrier mobility as high as 9100 cm(2) V-1 s(-1). (C) 2016 The Japan Society of Applied Physics</P>