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RISS 인기검색어
- 검색키워드
- 저자 : Lillo, T.M. (검색결과 3 건)
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Plant diversity and structure of forest habitat types on Dinagat Island, Philippines
Edgardo P. Lillo,Edwino S. Fernando,Mary Jane R. Lillo 국립중앙과학관 2019 Journal of Asia-Pacific Biodiversity Vol.12 No.1
Logging, mining and land conversion together threaten Dinagat Island. Diversity and structure of foresthabitat types were determined as basis for conservation and management. Identification of forest habitattypes was based on habitat’s physical characteristics. Six forest habitat types were identified covered by 432 native plant species classified into 87 familiesand 203 genera, 40 plant species were endemic to Dinagat Island. Of the 432 species, 58% recorded inlowland evergreen forest (LEF), 16% in upper montane, 15% in forest over limestone, 6% in lower montaneforest (LMF), 4% in mangrove forest, and 1% in beach forest, with average species diversity of 3.32. Trees in LEF were bigger, taller and larger in basal area as compared with other habitat types. Dominant species was Xanthostemon verdugonianus Náves ex Fern.-Vill with importance value of 9.857%. Native plant species was an asset for the mineral resource industry for site rehabilitation andconservation.
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Creep and creep-rupture of Alloy 617
Wright, J.K.,Lillo, T.M.,Wright, R.N.,Kim, Woo-Gon,Sah, In-Jin,Kim, Eung-Seon,Park, Ji-Yeon,Kim, Min-Hwan Elsevier 2018 Nuclear engineering and design Vol.329 No.-
<P><B>Abstract</B></P> <P>The Ni-Cr-Mo-Co material Alloy 617 is the leading candidate for VHTR intermediate heat exchangers operating above 750°C. Time-dependent properties are an important consideration in qualifying the alloy for construction of nuclear components. Creep behavior of several different heats of Alloy 617 has been evaluated in the temperature range of 800–1000°C. Power law creep behavior was observed for the minimum creep rate, with a stress exponent of 5.6 and activation energy of approximately 400kcal/Mol. The Monkman-Grant approach relating minimum creep rate to time to rupture gave a reasonable representation of the data for all of the testing with a slope of −0.84. Similarly, a modified Monkman-Grant fit the strain to failure data reasonably well. A Larson-Miller analysis was carried out to compare rupture behavior determined in the current experiments and historical data with well-known provenance over a wide range of conditions. It appears that the properties of modern heats of material are near the lower bound of rupture behavior when all of the data are considered in the same analysis.</P>
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Electron delocalization and charge mobility as a function of reduction in a metal–organic framework
Aubrey, Michael L.,Wiers, Brian M.,Andrews, Sean C.,Sakurai, Tsuneaki,Reyes-Lillo, Sebastian E.,Hamed, Samia M.,Yu, Chung-Jui,Darago, Lucy E.,Mason, Jarad A.,Baeg, Jin-Ook,Grandjean, Fernande,Long, Ga Nature Publishing Group UK 2018 Nature Materials Vol.17 No.7
<P>Conductive metal-organic frameworks are an emerging class of three-dimensional architectures with degrees of modularity, synthetic flexibility and structural predictability that are unprecedented in other porous materials. However, engendering long-range charge delocalization and establishing synthetic strategies that are broadly applicable to the diverse range of structures encountered for this class of materials remain challenging. Here, we report the synthesis of KxFe2(BDP)(3) (0 <= x <= 2; BDP2- =1,4-benzenedipyrazolate), which exhibits full charge delocalization within the parent framework and charge mobilities comparable to technologically relevant polymers and ceramics. Through a battery of spectroscopic methods, computational techniques and single-microcrystal field-effect transistor measurements, we demonstrate that fractional reduction of Fe-2(BDP)(3) results in a metal-organic framework that displays a nearly 10,000-fold enhancement in conductivity along a single crystallographic axis. The attainment of such properties in a KxFe2(BDP)(3) field-effect transistor represents the realization of a general synthetic strategy for the creation of new porous conductor-based devices.</P>
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