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- 저자 : Leksakul, Komgrit (검색결과 4 건)
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Low-bandgap, highly <i>c</i>-axis-oriented Al-doped ZnO thin films
Wen, Long,Kumar, Manish,Cho, Hyung Jun,Leksakul, Komgrit,Han, Jeon Geon IOP 2017 Journal of physics. D, applied physics Vol.50 No.18
<P>Low-bandgap transparent conductive oxides will be of interest to researchers who wish to address the health hazards of blue radiation emission from electronic displays. Here, we present a single-step, low-temperature fast enough (throughput > 60 nm min<SUP>−1</SUP>) process to grow highly <I>c</I>-axis-oriented crystalline Al-doped ZnO thin films via advanced plasma processing. Dual-power DC-magnetron sputtering plasma was employed for the synthesis of thin films. The addition of top power to a pre-existing rectangular power pushed additional ions to a confined plasma and increased the plasma density and electron temperature. The effect of this additional-ion pushing was systematically studied using the microstructure, surface properties, and electronic properties. As a result, bandgap reduction from 3.35 eV to 3.10 eV and tailoring of electrical resistivity (4.89 × 10<SUP>−4</SUP>–8.32 × 10<SUP>−3</SUP> Ω cm) and Seebeck coefficients (21–48 <I>µ</I>V K<SUP>−1</SUP>) were achieved in addition to excellent transparency. Given their properties, the obtained films show promise for multifunctional applications, such as in UV and near-blue radiation shielding, transparent conductive electrodes and low-temperature thermoelectrics.</P>
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Jun S. Lee,Su B. Jin,N. Vichiansan,한전건,M. Hori,K. Leksakul 한국물리학회 2015 Current Applied Physics Vol.15 No.11
This work investigates on chemical and mechanical resistance of hydrophobic films; prepared using radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method, by varying substrate temperature. For this work, Hexamethyldisilane (HMDS) is used as the precursor, with hydrogen gas as the reactive agent. The surface energy and surface morphology are studied by measuring water contact angle (WCA) and atomic force microscopy (AFM), respectively. Measurement reveals that WCA does not change much and acquires the value in between 105 and 110˚ . FTeIR analysis shows that the films are well-covered with “-CHx” groups, which can provide the hydrophobicity. The pencil hardness test of the deposited films at higher substrate temperature (>160 ℃), have shown a high stability up to 6H. Also, the films show good chemical resistance against boiling salt water and cosmetics in the chemical reliability test due to their much denser structure with reduced defects. Additionally, XPS analysis shows that there is the shift in the peak position of the CeC bond to lower binding energy that is attributed to a highly cross-linked carbon structure formation in the film. The films are chemically inert and have shown good adhesion and durability.
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Wen, Long,Kumar, Manish,Sahu, B.B.,Jin, S.B.,Sawangrat, C.,Leksakul, K.,Han, J.G. Elsevier 2015 Surface & coatings technology Vol.284 No.-
<P><B>Abstract</B></P> <P>Al doped ZnO films are prepared in dual-confined plasmas (rectangular side-ways and one top-side) in DC magnetron sputtering system without intentional substrate-heating. Present confinement shows improved transparent-conductive properties in Al doped ZnO thin films, when compared to those of deposited by conventional and facing-target confinement. As a function of working pressure and power density, plasma diagnostics is carried out at substrate location using optical emission spectroscopy, thermal energy transfer and net current density measurements. The optical, and electrical properties of the synthesis AZO films were studied and correlated to plasma conditions. It is found that high electron temperature, higher plasma density and highly ionization of oxygen play a key role in enhancing the deposition rate and transmittance ~90% along with minimizing resistivity in the order of 10<SUP>−4</SUP> Ωcm.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Developed advanced DC magnetron sputtering system to deposit highly conductive and transparent Al doped ZnO thin films. </LI> <LI> Presented plasma diagnostics using OES, net current density and thermal energy transfer at substrate location. </LI> <LI> Presented the effects of partial pressure and power density on transparent-conductive performances. </LI> <LI> Shown the advantage of present process over conventional DC magnetron sputtering systems. </LI> </UL> </P>
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Lee, J.S.,Jin, S.B.,Vichiansan, N.,Han, J.G.,Hori, M.,Leksakul, K. Elsevier 2015 CURRENT APPLIED PHYSICS Vol.15 No.11
This work investigates on chemical and mechanical resistance of hydrophobic films; prepared using radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method, by varying substrate temperature. For this work, Hexamethyldisilane (HMDS) is used as the precursor, with hydrogen gas as the reactive agent. The surface energy and surface morphology are studied by measuring water contact angle (WCA) and atomic force microscopy (AFM), respectively. Measurement reveals that WCA does not change much and acquires the value in between 105 and 110<SUP>o</SUP>. FT-IR analysis shows that the films are well-covered with ''-CH<SUB>x</SUB>'' groups, which can provide the hydrophobicity. The pencil hardness test of the deposited films at higher substrate temperature (>160 <SUP>o</SUP>C), have shown a high stability up to 6H. Also, the films show good chemical resistance against boiling salt water and cosmetics in the chemical reliability test due to their much denser structure with reduced defects. Additionally, XPS analysis shows that there is the shift in the peak position of the C-C bond to lower binding energy that is attributed to a highly cross-linked carbon structure formation in the film. The films are chemically inert and have shown good adhesion and durability.
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