http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
오늘 본 자료
K. Gurukrishna,H. R. Nikhita,S. M. Mallikarjuna Swamy,Ashok Rao 대한금속·재료학회 2022 METALS AND MATERIALS International Vol.28 No.8
A detailed investigation on the temperature dependent electrical properties of Cu2SnSe3system, synthesized via conventionalsolid-state reaction at different sintering temperatures are presented in this communication. All the samples exhibit degeneratesemiconducting nature at low temperatures. The existence of small polarons and hence electron–phonon interactionsare confirmed at temperatures below 400 K. A transition was observed from degenerate to non-degenerate semiconductingbehaviour at high temperatures (T > 400 K). The study confirms the unusual transition in electrical resistivity as well asthermopower at high temperatures in all the compounds, demonstrating the existence of minority carrier excitation alongwith temperature-triggered ionisation of the defects. The transport behaviour is further supported by an upward movementof Fermi level away from the valence band. Highest weighted mobility of 8.2 cm2V−1 s−1 at 673 K was obtained for thesample sintered at 1073 K. A considerable decrease in electrical resistivity with increase in temperature (T > 400 K) hasdriven the power factor to increase exponentially, thereby achieving highest value of 188 μV/mK2 (at 673 K) for the samplesintered at 673 K.