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Oh, Sewoung,Jun, Dong Hwan,Shin, Keun Wook,Choi, InHye,Jung, Sang Hyun,Choi, JeHyuk,Park, Wonkyu,Park, Yongjo,Yoon, Euijoon IEEE 2016 IEEE journal of photovoltaics Vol.6 No.4
<P>We proposed a new scheme, controlling the crack formation by notch patterns, to fabricate self-isolated high-efficiency gallium arsenide (GaAs)-based solar cells on a silicon (Si) substrate. The notch patterns introduced into the Si substrate were found to successfully generate the crack-free areas of 2 mm x 2 mm size separated by the cracks for the 5.8-mu m-thick GaAs layers on it. The individual solar cells on the crack-free areas were confirmed to be electrically isolated from one another by the well-defined crack array. The open-circuit voltage and the efficiency of the crack-free cell were improved to 0.87 V and 18.0%, respectively, from 0.78 V and 14.7% for the cell with 33.2 cm(-1) of linear crack density.</P>
Lunar Magnetic field investigations of Korea Pathfinder Lunar Orbiter
Ho Jin,Khan-Hyuk Kim,Derac Son,Hyojeong Lee,Jehyuk Shin,Eunae Kim 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.2
Korea Pathfinder Lunar Orbiter (KPLO) is the first Korean Lunar exploration mission. Kplo-MAGnetometer (KMAG) is one of the scientific instruments of KPLO set to be launched in 2022. Its scientific objectives are the investigations of the lithospheric magnetism of the Moon and measure the electromagnetic wave properties near Moon’s orbit space. KMAG consists of three fluxgate magnetometers on a 1.2 m long boom. The three magnetometers are used for scientific measurements, redundancy checks, and multi-sensor technical investigation. The magnetometers and an inner Anisotropic Magneto-Resistive sensor perform simultaneous sampling to correct for the magnetic field interference caused by the spacecraft. The fully integrated flight model assembly showed that the magnetometer noise level was less than 30 pT Hz−1/2 at 1 Hz and stability was within ±0.2 nT at the 10 Hz sampling rate. This paper describes the configuration and performance of the KMAG using the multi-sensing method. The KMAG will be able to contribute to multi-site in-situ measurements of the lunar magnetic field with others lunar mission during KPLO operation phase. We expect that the KMAG will provide an up-to-date lunar observation data set and an opportunity to perform the multi-sensor observation. 〈그림 본문참조〉
Park, Hyeong-Ho,Zhang, Xin,Cho, Yunae,Kim, Dong-Wook,Kim, Joondong,Lee, Keun Woo,Choi, Jehyuk,Lee, Hee Kwan,Jung, Sang Hyun,Her, Eun Jin,Kim, Chang Hwan,Moon, A-Young,Shin, Chan-Soo,Shin, Hyun-Beom,Su Optical Society of America 2014 Optics express Vol.22 No.suppl3
<P>A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV) assisted imprinting with dry etching techniques. In this approach, hexagonal arrays of cone-shaped etch pits are fabricated on the surface of LEDs, forming gradient effective-refractive-index that can mitigate the emission loss due to total internal reflection and therefore increase the light extraction efficiency. For comparison, wafer-scale FLAT-LEDs without any surface roughening, WET-LEDs with surface roughened by wet etching, and DRY-LEDs with surface roughened by varying the dry etching time of the AlGaInP layer, were fabricated and characterized. The average output power for wafer-scale FLAT-LEDs, WET-LEDs, and DRY3-LEDs (optimal) at 350 mA was found to be 102, 140, and 172 mW, respectively, and there was no noticeable electrical degradation with the WET-LEDs and DRY-LEDs. The light output was increased by 37.3% with wet etching, and 68.6% with dry etching surface roughening, respectively, without compromising the electrical performance of LEDs. A total number of 1600 LED chips were tested for each type of LEDs. The yield of chips with an optical output power of 120 mW and above was 0.3% (4 chips), 42.8% (684 chips), and 90.1% (1441 chips) for FLAT-LEDs, WET-LEDs, and DRY3-LEDs, respectively. The dry etching surface roughening approach developed here is potentially useful for the industrial mass production of wafer-scale high power LEDs.</P>
Influence of Growth Temperature on the Characteristics of Single-Junction p—i—n InGaP Solar Cells
Jung, Sang Hyun,Kim, Youngjo,Kim, Chang Zoo,Jun, Dong-Hwan,Kim, Kangho,Shin, Hyun-Beom,Choi, JeHyuk,Park, Won-Kyu,Lee, Jaejin,Kang, Ho Kwan American Scientific Publishers 2017 Journal of nanoscience and nanotechnology Vol.17 No.4
<P>Single-junction p-i-n InGaP solar cells are grown at various temperatures from 620 to 700 degrees C by low pressure metalorganic chemical vapor deposition on GaAs (001) substrates. The short circuit current density of the p-i-n InGaP solar cells increases by up to 38.8% when the growth temperature is reduced from 700 to 620 degrees C, while the open circuit voltage and fill factor show relatively small changes. The external quantum efficiency, especially, in the wavelength regime below 500 nm, is improved for the p-i-n InGaP solar cells grown at lower temperatures. The improvement might be attributed to the reduced absorption loss of the photons in the n-InGaP emitter region. The highest conversion efficiency of 11.01% is attributed from the p-i-n InGaP solar cell grown at 640 degrees C. Electron mobility and concentration of undoped InGaP layers are investigated as a function of the growth temperature and correlated with the p-i-n InGaP solar cell performance.</P>