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H. L. Hsu,J. L. Juang,K. T. Luo 국제구조공학회 2009 Steel and Composite Structures, An International J Vol.9 No.4
This study focuses on the experimental evaluation of the flexural-torsional performance of high strength thin-walled composite members. A series of tests on composite members with various sectional aspect ratios subjected to eccentric cyclic loads were conducted. Test results show that the composite member’s torsional strength could be approximated using a series of linear segments and evaluated using the superposition of the component steel and reinforced concrete responses. It is also validated from the tests that the strength deterioration of members subjected to combined loads is closely related to the aspect ratios of the sections. An interaction expression between the bending and torsion for high strength thin-walled composite members is proposed for engineering practice references.
H.-L. Hsu,J.-L. Juang,C.-H. Chou 국제구조공학회 2011 Steel and Composite Structures, An International J Vol.11 No.1
This study experimentally evaluated the seismic performance of steel knee braced frame structures with energy dissipation mechanism. A series of cyclic load tests were conducted on the steel moment resisting frames and the proposed knee braced frames. Test results validated that the demand in the beam-to-column connection designs was alleviated by the proposed design method. Test results also showed that the strength and stiffness of the proposed design were effectively enhanced. Comparisons in energy dissipation between the steel moment resisting frames and the steel knee braced frames further justified the applicability of the proposed method.
M.-H. Juang,J. Yu,S.-L. Jang 한국물리학회 2011 Current Applied Physics Vol.11 No.3
A trench MOS barrier Schottky (TMBS) rectifier formed by using high-energy boron trench-bottom implantation has been proposed. As compared to the conventional TMBS rectifier, this proposed device can achieve much larger reverse blocking voltage without considerable degradation of forward characteristics. By this scheme, the large peak electric field near the trench corner can be largely reduced due to charge compensation. In addition, owing to the presence of the counter-doped region, the second peak electric field is created below the trench bottom. Higher trench-bottom implantation energy may form wider boron dopant distribution, which facilitate larger alleviation of the second peak electric field. However, too high boron implantation energy may considerably cause dopant encroachment into the mesa region, which would increase the second electric field. Hence, properly high trench-bottom implantation energy should be employed to simultaneously cause low peak electric field at regions near the trench corner and below the trench bottom, thus providing a relatively high blocking voltage for this TMBS rectifier.