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RISS 인기검색어
- 검색키워드
- 저자 : Itaru Yasui ) (검색결과 5 건)
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RF-enhanced DC-magnetron Sputtering of Indium Tin Oxide
Futagami, Toshiro,Kamei, Masayuki,Yasui, Itaru,Shigesato, Yuzo The Korean Ceramic Society 2001 The Korean journal of ceramics Vol.7 No.1
Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.
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Crystallization and Electrical Properties of Doped and Undoped Indium Oxide Films
Kamei, Masayuki,Akao, Hirotaka,Song, Pung Keun,Yasui, Itaru,Shigesato, Yuzo The Korean Ceramic Society 2000 The Korean journal of ceramics Vol.6 No.2
The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.
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Tin Doping Mechanism in Indium Oxide by MD Simulation
Utsuno, Futoshi,Yamada, Naoomi,Kamei, Masayuki,Yasui, Itaru The Korean Ceramic Society 1999 The Korean journal of ceramics Vol.5 No.1
In order to investigate Sn substitution sites and interstitial O atoms in tin-doped indium oxide, molecular dynamics (MD) simulations were carried out. There are two kinds of cation sites in $In_2O_3$, namely b-site and d-site. NTP-MD simulations under the condition of 300 K and 0 GPa were performed with two kinds of cells substituted by Sn atoms at each site. The excess oxygen atom accompanied with Sn doping was also taken into consideration. According to the calculations of Sn potential energies in each site, it was revealed that Sn atoms were substituted for b-sites rather than for d-sites. It was also revealed that the interstitial excess oxygen atoms tend to be connected with the Sn atoms substituted for the d-sites Sn rather than for the b-site. There MD simulation results well agreed with the experimental results.
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New Glass Ceramics for Hard Disk Substrates with Improved Surface Flatness
Utsuno, Futoshi,Yamada, Yusuke,Takeya, Huminori,Yasui, Itaru The Korean Ceramic Society 1999 The Korean journal of ceramics Vol.5 No.4
New glass ceramics were investigated for the application as substrates to be used in hard disk devices. The glass system to precipitate lithium di-silicate was studied so as to optimize the composition to realize very high surface flatness. The addition of small amount of several metal oxides with high valences had very drastic effects on the microstructure, because they played a role of crystallization agents, and consequently it determined surface flatness even after the polishing process. The possible mechanism changes of crystal growth due to the addition of metal oxides were discussed in relation to the final micro-texture development. The glass ceramics with very high surface flatness(Ra=7.1 $\AA$) was obtained by the addition of the mixture of $P-2O_5 \;and \;MoO_3$ as crystallization agents.
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수식 졸 - 겔법에 의한 TiO2 - SiO2 분체합성 및 광촉매활성
김병관,수야철효 (水野哲孝),안정지 (安井至) ( Byung Kwan Kim,Noritaka Mizuno,Itaru Yasui ) 한국공업화학회 1996 공업화학 Vol.7 No.6
DCCA로 1-도데카놀을 이용한 수식 졸-겔법에 의한 TiO₂-SiO₂계분체를 합성하였으며, 이들 합성분체에 대한 characterization과 광활성촉매에 대해 검토하였다. 500℃까지의 감량변화는 TiO₂단독분체가 33.0wt%, TiO₂/SiO₂의 몰비가 75/25, 50/50 및 25/75인 분체는 각각 67.0wt%, 70.0wt% 및 73.0wt%, 그리고 SiO₂단독분체는 42.5wt%이였다. 이들 탈리는 거의 대부분이 유기물질이였다. 합성직후의 분체는 TiO₂단독분체를 제외하고는 무정형화합물이였고, 아나타아제의 루틸로의 상전이는 SiO₂에 의해 억제되었다. 합성직후의 분체는 입자의 형태가 관찰되지 않았으나, 600℃, 1시간 가열에 의한 TiO₂단독분체, TiO₂/SiO₂의 몰비가 75/25 및 50/50인 분체는 모두 서브미크론의 입자를 보였으며, 몰비가 25/75의 분체 및 SiO₂단독분체는 여전히 벌크상태였다. 비표면적 역시 SiO₂의 증가와 함께 증가하였으며, 세공크기 역시 SiO₂성분에 의존하였다. 그리고 이들 가열물의 광촉매활성은, TiO₂/SiO₂의 몰비가 75/25인 분체의 경우, 수소발생량으로 0.240μmol/h.g-cat.을 나타내었으며, TiO₂단독분체의 그것보다는 약 2.6배, 표준광촉매물질인 P-25(Degussa P-25)보다는 약 2.0배 가량 큰 값을 나타냈다. Various TiO₂-SiO₂ composite powders were prepared by the modified sol-gel method using 1-dodecanol as DCCA (Dryng Control Chemical Additive). Their characterizations were carried out and their photocatalytic catalysis was examined on the evolution reaction of hydrogen. The weight losses at 500℃ of only TiO₂ and SiO₂ powders were 33.0wt% and 42.5wt%, respectively, and those of the TiO₂/SiO₂ powders (TiO₂/SiO₂=25/75, 50/50 and 75/25) were about 70.0±3.0wt%. The released substances from the powders were almost organic matters. The as-prepared powders except only TiO₂powder were amorphous. Transformation of anatase to rutil was hindered by SiO₂ component and the crystallinity of anatase was decreased with increasing SiO₂ contents. The as-prepared powders were bulky states. By heating at 600℃ for 1 hr TiO₂-SiO₂ powders (TiO₂=100%, TiO₂/SiO₂=75/25,50/50) showed agglomerates consisted of particles in submicron, but those of TiO₂/SiO₂=25/75 and SiO₂=100% were still bulky states. Specific surface area of the powders heat-treated at 600℃ for 1hr was increased with SiO₂ contents and their pore sizes were also depended on SiO₂ contents. The photocatalytic activity of TiO₂/SiO₂=75/25 heat-treated at 600℃ for 1hr was 0.240mol/h.g-cat as H₂ evolution rate. This value was about 2.0 times that of P-25(Degussa P-25) as a standard photocatalyst.
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