http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Ikram Orak (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
The electrical characterizations and illumination response of Co/N-type GaP junction device
Ikram Orak,Kadir Ejderha,Abdulmecit Turut 한국물리학회 2015 Current Applied Physics Vol.15 No.9
The manuscript describes characterization of a Co/n-GaP junction device. The currentevoltage etemperature (I-V-T), capacitanceefrequencyetemperature (C-f-T) measurements of the device were analyzed in the temperature range of 60e320 K by the steps of 20 K under dark condition, and light condition at room temperature. The characteristic parameters such as barrier height (BH), ideality factor (n) have been determined from the forward bias IeV characteristics on the basis of standard thermionic emission. The BH and n were found to be 0.98 eV and 1.05 at room temperature, respectively. The ideality factor increased and BH decreased with a decrease in temperature. The BH and n were found to be linear dependent on each other at two different regions, and these values are predicted with existence of Gaussian distribution (GD). For the two different methods the BH is seen in good agreement with each other. Especially, the homogeneous BH for the first region is found to around 1.02 eV. The homogeneous BH values are found to be good agreement for 3 different methods such as the linear correlations of BH versus n plot, GD of BHs and Norde's function. Interface states (Nss) and their time constant (t) were calculated from the C-f-T measurements and as sample temperature was increased, the Nss value increased and t decreased in dark conditions. Photovoltaic parameters such as fill factor (FF), power conversion efficiency (ηp), open circuit voltage (Voc) and short circuit current (Isc) were calculated. According to these, it was been seen that the semiconductor device under light illumination showed photovoltaic behavior.
-
The structural analysis of MWCNT-SiO2 and electrical properties on device application
Adem Kocyigit,Ikram Orak,Ibrahim Karteri,Serhan Urus 한국물리학회 2017 Current Applied Physics Vol.17 No.9
Al/MWCNT-SiO2/p-Si device were obtained using chemical techniques and characterized using the I-V (under dark and light conditions) and C-V measurements depending on various frequency. MWCNT-SiO2 composite layer of the device were also characterized using XRD, FTIR, SEM, TEM and TGA measurements. These all results indicated that the MWCNT-SiO2 layer synthesized successfully on Si wafer as a composite form with chemical processes and spin coating. I-V measurements showed that device has good rectifying properties, small saturation current and good photodiode properties. Solar cell conversion efficiency (hp) and fill factor (FF) values of the device also were calculated as 0.12% and 47.6%, respectively. It could be seen from C-V measurements that capacitance and conductance properties of the device strongly depended on frequency and voltage. It may be used and improved this device as rectifier, photodiode and capacitor in the future.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
